IRF1407 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF1407
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 330 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 130 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 150 ns
Cossⓘ - Выходная емкость: 890 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0078 Ohm
Тип корпуса: TO220AB
IRF1407 Datasheet (PDF)
irf1407.pdf
PD - 93907AUTOMOTIVE MOSFETIRF1407Typical ApplicationsHEXFET Power MOSFET Integrated Starter AlternatorD 42 Volts Automotive Electrical SystemsVDSS = 75VBenefits Advanced Process TechnologyRDS(on) = 0.0078 Ultra Low On-ResistanceG Dynamic dv/dt Rating 175C Operating Temperature ID = 130AVS Fast Switching Repetitive Avalanche Allowed up to TjmaxDescri
irf1407pbf.pdf
PD - 95485AIRF1407PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDBenefitsVDSS = 75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.0078 Dynamic dv/dt RatingG 175C Operating Temperature Fast SwitchingID = 130AS Repetitive Avalanche Allowed up to TjmaxDescriptionThis Stripe Planar design of HEXFET Power MOSFETs
irf1407pbf.pdf
PD - 95485AIRF1407PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDBenefitsVDSS = 75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.0078 Dynamic dv/dt RatingG 175C Operating Temperature Fast SwitchingID = 130AS Repetitive Avalanche Allowed up to TjmaxDescriptionThis Stripe Planar design of HEXFET Power MOSFETs
irf1407.pdf
isc N-Channel MOSFET Transistor IRF1407IIRF1407FEATURESStatic drain-source on-resistance:RDS(on) 7.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM
irf1407l.pdf
PD -94335IRF1407SIRF1407LBenefits Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 0.0078DescriptionGAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve
irf1407s.pdf
PD -94335IRF1407SIRF1407LBenefits Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 0.0078DescriptionGAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve
irf1407l.pdf
isc N-Channel MOSFET Transistor IRF1407LFEATURESStatic drain-source on-resistance:RDS(on) 7.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
irf1407s.pdf
Isc N-Channel MOSFET Transistor IRF1407SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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