IRF1407 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 93907AUTOMOTIVE MOSFETIRF1407Typical ApplicationsHEXFET Power MOSFET Integrated Starter AlternatorD 42 Volts Automotive Electrical SystemsVDSS = 75VBenefits Advanced Process TechnologyRDS(on) = 0.0078 Ultra Low On-ResistanceG Dynamic dv/dt Rating 175C Operating Temperature ID = 130AVS Fast Switching Repetitive Avalanche Allowed up to TjmaxDescri

PD - 95485AIRF1407PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDBenefitsVDSS = 75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.0078 Dynamic dv/dt RatingG 175C Operating Temperature Fast SwitchingID = 130AS Repetitive Avalanche Allowed up to TjmaxDescriptionThis Stripe Planar design of HEXFET Power MOSFETs

80V N-Channel Power MOSFETDESCRIPTIONThe IRF1407 uses advanced trench technology toprovide excellent RDS(ON), low gate charge. It can be usedin a wide variety of applications.KEY CHARACTERISTICS VDS = 80V,ID = 200A RDS(ON)

isc N-Channel MOSFET Transistor IRF1407IIRF1407FEATURESStatic drain-source on-resistance:RDS(on) 7.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

PD -94335IRF1407SIRF1407LBenefits Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 0.0078DescriptionGAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve

PD -94335IRF1407SIRF1407LBenefits Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 0.0078DescriptionGAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve

isc N-Channel MOSFET Transistor IRF1407LFEATURESStatic drain-source on-resistance:RDS(on) 7.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

Isc N-Channel MOSFET Transistor IRF1407SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt