IRF1407 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF1407
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 330 W
   Voltaje máximo drenador - fuente |Vds|: 75 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 130 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 160 nC
   Tiempo de subida (tr): 150 nS
   Conductancia de drenaje-sustrato (Cd): 890 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0078 Ohm
   Paquete / Cubierta: TO220AB

Búsqueda de reemplazo de MOSFET IRF1407

IRF1407 Datasheet (PDF)

..1. Size:127K international rectifier
irf1407.pdf

PD - 93907AUTOMOTIVE MOSFETIRF1407Typical ApplicationsHEXFET Power MOSFET Integrated Starter AlternatorD 42 Volts Automotive Electrical SystemsVDSS = 75VBenefits Advanced Process TechnologyRDS(on) = 0.0078 Ultra Low On-ResistanceG Dynamic dv/dt Rating 175C Operating Temperature ID = 130AVS Fast Switching Repetitive Avalanche Allowed up to TjmaxDescri

..2. Size:266K international rectifier
irf1407pbf.pdf

PD - 95485AIRF1407PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDBenefitsVDSS = 75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.0078 Dynamic dv/dt RatingG 175C Operating Temperature Fast SwitchingID = 130AS Repetitive Avalanche Allowed up to TjmaxDescriptionThis Stripe Planar design of HEXFET Power MOSFETs

..3. Size:266K infineon
irf1407pbf.pdf

..4. Size:245K inchange semiconductor
irf1407.pdf

isc N-Channel MOSFET Transistor IRF1407IIRF1407FEATURESStatic drain-source on-resistance:RDS(on) 7.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

0.1. Size:159K international rectifier
irf1407l.pdf

PD -94335IRF1407SIRF1407LBenefits Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 0.0078DescriptionGAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve

0.2. Size:159K international rectifier
irf1407s.pdf

0.3. Size:287K inchange semiconductor
irf1407l.pdf

isc N-Channel MOSFET Transistor IRF1407LFEATURESStatic drain-source on-resistance:RDS(on) 7.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

0.4. Size:258K inchange semiconductor
irf1407s.pdf

Isc N-Channel MOSFET Transistor IRF1407SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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