IRF1407 Datasheet. Equivalente

 ..1. Size:127K  international rectifier
 irf1407.pdf

PD - 93907 AUTOMOTIVE MOSFET IRF1407 Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems VDSS = 75V Benefits Advanced Process Technology RDS(on) = 0.0078 Ultra Low On-Resistance G Dynamic dv/dt Rating 175 C Operating Temperature ID = 130AV S Fast Switching Repetitive Avalanche Allowed up to Tjmax Descri

 ..2. Size:266K  international rectifier
 irf1407pbf.pdf

PD - 95485A IRF1407PbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D Benefits VDSS = 75V Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.0078 Dynamic dv/dt Rating G 175 C Operating Temperature Fast Switching ID = 130A S Repetitive Avalanche Allowed up to Tjmax Description This Stripe Planar design of HEXFET Power MOSFETs

 ..3. Size:1054K  cn minos
 irf1407.pdf

80V N-Channel Power MOSFET DESCRIPTION The IRF1407 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS VDS = 80V,ID = 200A RDS(ON)

 ..4. Size:245K  inchange semiconductor
 irf1407.pdf

isc N-Channel MOSFET Transistor IRF1407 IIRF1407 FEATURES Static drain-source on-resistance RDS(on) 7.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

 0.1. Size:159K  international rectifier
 irf1407l.pdf

PD -94335 IRF1407S IRF1407L Benefits Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 0.0078 Description G Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

 0.2. Size:159K  international rectifier
 irf1407s.pdf

PD -94335 IRF1407S IRF1407L Benefits Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 0.0078 Description G Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

 0.3. Size:287K  inchange semiconductor
 irf1407l.pdf

isc N-Channel MOSFET Transistor IRF1407L FEATURES Static drain-source on-resistance RDS(on) 7.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

 0.4. Size:258K  inchange semiconductor
 irf1407s.pdf

Isc N-Channel MOSFET Transistor IRF1407S FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt