IRF1407 Todos los transistores

 

IRF1407 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF1407

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 330 W

Tensión drenaje-fuente |Vds|: 75 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 130 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 160 nC

Resistencia drenaje-fuente RDS(on): 0.0078 Ohm

Empaquetado / Estuche: TO220AB

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IRF1407 Datasheet (PDF)

..1. irf1407.pdf Size:127K _international_rectifier

IRF1407
IRF1407

PD - 93907AUTOMOTIVE MOSFETIRF1407Typical ApplicationsHEXFET Power MOSFET Integrated Starter AlternatorD 42 Volts Automotive Electrical SystemsVDSS = 75VBenefits Advanced Process TechnologyRDS(on) = 0.0078 Ultra Low On-ResistanceG Dynamic dv/dt Rating 175C Operating Temperature ID = 130AVS Fast Switching Repetitive Avalanche Allowed up to TjmaxDescri

..2. irf1407.pdf Size:245K _inchange_semiconductor

IRF1407
IRF1407

isc N-Channel MOSFET Transistor IRF1407IIRF1407FEATURESStatic drain-source on-resistance:RDS(on) 7.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

0.1. irf1407s.pdf Size:159K _international_rectifier

IRF1407
IRF1407

PD -94335IRF1407SIRF1407LBenefits Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 0.0078DescriptionGAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve

0.2. irf1407pbf.pdf Size:266K _international_rectifier

IRF1407
IRF1407

PD - 95485AIRF1407PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDBenefitsVDSS = 75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.0078 Dynamic dv/dt RatingG 175C Operating Temperature Fast SwitchingID = 130AS Repetitive Avalanche Allowed up to TjmaxDescriptionThis Stripe Planar design of HEXFET Power MOSFETs

 0.3. irf1407pbf.pdf Size:266K _infineon

IRF1407
IRF1407

PD - 95485AIRF1407PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDBenefitsVDSS = 75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.0078 Dynamic dv/dt RatingG 175C Operating Temperature Fast SwitchingID = 130AS Repetitive Avalanche Allowed up to TjmaxDescriptionThis Stripe Planar design of HEXFET Power MOSFETs

0.4. irf1407s.pdf Size:258K _inchange_semiconductor

IRF1407
IRF1407

Isc N-Channel MOSFET Transistor IRF1407SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 0.5. irf1407l.pdf Size:287K _inchange_semiconductor

IRF1407
IRF1407

isc N-Channel MOSFET Transistor IRF1407LFEATURESStatic drain-source on-resistance:RDS(on) 7.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

Otros transistores... IRF1405 , IRF1405L , IRF1405S , IRF1405Z , IRF1405ZL , IRF1405ZL-7P , IRF1405ZS , IRF1405ZS-7P , RFP50N06 , IRF1407L , IRF1407S , IRF1503 , IRF1503S , IRF1607 , IRF1902 , IRF2204 , IRF2204L .

 

 
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