All MOSFET. IRF2807 Datasheet

 

IRF2807 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF2807

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 230 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 82 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 160(max) nC

Rise Time (tr): 64 nS

Drain-Source Capacitance (Cd): 610 pF

Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm

Package: TO220AB

IRF2807 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF2807 Datasheet (PDF)

 ..1. Size:207K  international rectifier
irf2807.pdf

IRF2807 IRF2807

PD - 91517IRF2807HEXFET Power MOSFET Advanced Process TechnologyDVDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 13mG Fast Switching Fully Avalanche RatedID = 82A SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistanc

 ..2. Size:233K  international rectifier
irf2807pbf.pdf

IRF2807 IRF2807

PD - 94970AIRF2807PbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 75Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 13ml Fast SwitchingGl Fully Avalanche Ratedl Lead-Free ID = 82ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveex

 ..3. Size:245K  inchange semiconductor
irf2807.pdf

IRF2807 IRF2807

isc N-Channel MOSFET Transistor IRF2807IIRF2807FEATURESStatic drain-source on-resistance:RDS(on) 13mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 0.1. Size:173K  international rectifier
irf2807z.pdf

IRF2807 IRF2807

PD - 94659IRF2807ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 75V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 9.4m 175C Operating TemperatureG Fast Switching Repetitive Avalanche Allowed up to TjmaxID = 75ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes th

 0.2. Size:399K  international rectifier
irf2807zlpbf irf2807zpbf irf2807zspbf.pdf

IRF2807 IRF2807

PD - 95488AIRF2807ZPbFIRF2807ZSPbFFeaturesIRF2807ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.4mGID = 75ADescriptionS This HEXFET Power MOSFET utilizes the latestprocessing techni

 0.3. Size:272K  international rectifier
irf2807lpbf irf2807spbf.pdf

IRF2807 IRF2807

PD - 95945IRF2807SPbFIRF2807LPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 75Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 13ml Fully Avalanche RatedGl Lead-FreeID = 82ADescriptionSAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques

 0.4. Size:124K  international rectifier
irf2807s.pdf

IRF2807 IRF2807

PD - 94170IRF2807SIRF2807LHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 75V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 13m Fast SwitchingG Fully Avalanche RatedID = 82A DescriptionSAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low o

 0.5. Size:272K  infineon
irf2807spbf irf2807lpbf.pdf

IRF2807 IRF2807

PD - 95945IRF2807SPbFIRF2807LPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 75Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 13ml Fully Avalanche RatedGl Lead-FreeID = 82ADescriptionSAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques

 0.6. Size:399K  infineon
irf2807zpbf irf2807zspbf irf2807zlpbf.pdf

IRF2807 IRF2807

PD - 95488AIRF2807ZPbFIRF2807ZSPbFFeaturesIRF2807ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.4mGID = 75ADescriptionS This HEXFET Power MOSFET utilizes the latestprocessing techni

 0.7. Size:196K  infineon
auirf2807.pdf

IRF2807 IRF2807

PD - 96384AAUTOMOTIVE GRADEAUIRF2807HEXFET Power MOSFETFeaturesV(BR)DSS75Vl Advanced Planar Technology Dl Low On-Resistancel Dynamic dV/dT RatingRDS(on) max.13ml 175C Operating Temperaturel Fast SwitchingGID(Silicon Limited) 82Al Fully Avalanche Ratedl Repetitive Avalanche Allowed up to TjmaxSID (Package Limited) 75Al Lead-Free, RoHS Compliantl Au

 0.8. Size:256K  inchange semiconductor
irf2807zl.pdf

IRF2807 IRF2807

Isc N-Channel MOSFET Transistor IRF2807ZLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75

 0.9. Size:246K  inchange semiconductor
irf2807z.pdf

IRF2807 IRF2807

isc N-Channel MOSFET Transistor IRF2807Z, IIRF2807ZFEATURESStatic drain-source on-resistance:RDS(on) 8.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous Rectifier applicationsResonant mode power suppliesBattery powered circuitsABSO

 0.10. Size:258K  inchange semiconductor
irf2807s.pdf

IRF2807 IRF2807

Isc N-Channel MOSFET Transistor IRF2807SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 0.11. Size:256K  inchange semiconductor
irf2807l.pdf

IRF2807 IRF2807

Isc N-Channel MOSFET Transistor IRF2807LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75

 0.12. Size:258K  inchange semiconductor
irf2807zs.pdf

IRF2807 IRF2807

Isc N-Channel MOSFET Transistor IRF2807ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

Datasheet: IRF142 , IRF143 , IRF150 , IRF151 , IRF153 , IRF230 , IRF240 , IRF250 , 2N60 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 , IRF3315 , IRF3315L .

 

 
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