All MOSFET. IRF2807 Datasheet

 

IRF2807 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF2807

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 82 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 106.7 nC

Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm

Package: TO220AB

IRF2807 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF2807 Datasheet (PDF)

0.1. irf2807z.pdf Size:173K _international_rectifier

IRF2807
IRF2807

PD - 94659 IRF2807Z AUTOMOTIVE MOSFET HEXFET® Power MOSFET Features D Advanced Process Technology VDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 9.4mΩ 175°C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes th

0.2. irf2807zlpbf irf2807zpbf irf2807zspbf.pdf Size:399K _international_rectifier

IRF2807
IRF2807

PD - 95488A IRF2807ZPbF IRF2807ZSPbF Features IRF2807ZLPbF Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175°C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.4mΩ G ID = 75A Description S This HEXFET® Power MOSFET utilizes the latest processing techni

 0.3. irf2807lpbf irf2807spbf.pdf Size:272K _international_rectifier

IRF2807
IRF2807

PD - 95945 IRF2807SPbF IRF2807LPbF l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 75V l 175°C Operating Temperature l Fast Switching RDS(on) = 13mΩ l Fully Avalanche Rated G l Lead-Free ID = 82A‡ Description S Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques

0.4. irf2807.pdf Size:207K _international_rectifier

IRF2807
IRF2807

PD - 91517 IRF2807 HEXFET® Power MOSFET Advanced Process Technology D VDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 13mΩ G Fast Switching Fully Avalanche Rated ID = 82A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc

 0.5. irf2807s.pdf Size:124K _international_rectifier

IRF2807
IRF2807

PD - 94170 IRF2807S IRF2807L HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 75V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 13mΩ Fast Switching G Fully Avalanche Rated ID = 82A Description S Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low o

0.6. irf2807pbf.pdf Size:233K _international_rectifier

IRF2807
IRF2807

PD - 94970A IRF2807PbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 75V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 13mΩ l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 82A‡ S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

0.7. irf2807z.pdf Size:246K _inchange_semiconductor

IRF2807
IRF2807

isc N-Channel MOSFET Transistor IRF2807Z, IIRF2807Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.4mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Synchronous Rectifier applications ·Resonant mode power supplies ·Battery powered circuits ·ABSO

0.8. irf2807.pdf Size:245K _inchange_semiconductor

IRF2807
IRF2807

isc N-Channel MOSFET Transistor IRF2807,IIRF2807 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤13mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMB

0.9. irf2807s.pdf Size:258K _inchange_semiconductor

IRF2807
IRF2807

Isc N-Channel MOSFET Transistor IRF2807S ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

0.10. irf2807zs.pdf Size:258K _inchange_semiconductor

IRF2807
IRF2807

Isc N-Channel MOSFET Transistor IRF2807ZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

Datasheet: IRF142 , IRF143 , IRF150 , IRF151 , IRF153 , IRF230 , IRF240 , IRF250 , BF245C , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 , IRF3315 , IRF3315L .

 

 
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