IRF2807 Todos los transistores

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IRF2807 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF2807

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 200 W

Tensión drenaje-fuente (Vds): 75 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 82 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.013 Ohm

Empaquetado / Estuche: TO220AB

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IRF2807 Datasheet (PDF)

1.1. irf2807.pdf Size:207K _international_rectifier

IRF2807
IRF2807

PD - 91517 IRF2807 HEXFET Power MOSFET Advanced Process Technology D VDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 13m? G Fast Switching Fully Avalanche Rated ID = 82A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per si

1.2. irf2807zlpbf irf2807zpbf irf2807zspbf.pdf Size:399K _international_rectifier

IRF2807
IRF2807

PD - 95488A IRF2807ZPbF IRF2807ZSPbF Features IRF2807ZLPbF Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175°C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.4mΩ G ID = 75A Description S This HEXFET® Power MOSFET utilizes the latest processing techni

 1.3. irf2807pbf.pdf Size:233K _international_rectifier

IRF2807
IRF2807

PD - 94970A IRF2807PbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 75V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 13mΩ l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 82A‡ S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

1.4. irf2807s.pdf Size:124K _international_rectifier

IRF2807
IRF2807

PD - 94170 IRF2807S IRF2807L HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 75V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 13m? Fast Switching G Fully Avalanche Rated ID = 82A Description S Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resist

 1.5. irf2807z.pdf Size:173K _international_rectifier

IRF2807
IRF2807

PD - 94659 IRF2807Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 9.4m? 175C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest

1.6. irf2807lpbf irf2807spbf.pdf Size:272K _international_rectifier

IRF2807
IRF2807

PD - 95945 IRF2807SPbF IRF2807LPbF l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 75V l 175°C Operating Temperature l Fast Switching RDS(on) = 13mΩ l Fully Avalanche Rated G l Lead-Free ID = 82A‡ Description S Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques

Otros transistores... IRF142 , IRF143 , IRF150 , IRF151 , IRF153 , IRF230 , IRF240 , IRF250 , BF245C , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 , IRF3315 , IRF3315L .

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