All MOSFET. IRF1310NS Datasheet

 

IRF1310NS MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF1310NS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 160 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 42 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 73.3 nC

Maximum Drain-Source On-State Resistance (Rds): 0.036 Ohm

Package: D2PAK

IRF1310NS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF1310NS Datasheet (PDF)

1.1. irf1310nspbf.pdf Size:721K _update

IRF1310NS
IRF1310NS

PD- 95322 IRF1310NS/LPbF • Lead-Free www.irf.com 1 05/27/04 IRF1310NS/LPbF 2 www.irf.com IRF1310NS/LPbF www.irf.com 3 IRF1310NS/LPbF 4 www.irf.com IRF1310NS/LPbF www.irf.com 5 IRF1310NS/LPbF 6 www.irf.com IRF1310NS/LPbF www.irf.com 7 IRF1310NS/LPbF D2Pak Package Outline D2Pak Part Marking Information THIS IS AN IRF530S WITH PART NUMBER LOT CODE 8024 INTERNATIONAL

1.2. irf1310ns.pdf Size:156K _international_rectifier

IRF1310NS
IRF1310NS

PD - 91514B IRF1310NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS =100V Surface Mount (IRF1310NS) Low-profile through-hole (IRF1310NL) 175C Operating Temperature RDS(on) = 0.036? G Fast Switching Fully Avalanche Rated ID = 42A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

 2.1. irf1310npbf.pdf Size:594K _update

IRF1310NS
IRF1310NS

PD - 95690 IRF1310NPbF • Lead-Free www.irf.com 8/19/04 IRF1310NPbF 2 www.irf.com IRF1310NPbF www.irf.com 3 IRF1310NPbF 4 www.irf.com IRF1310NPbF www.irf.com 5 IRF1310NPbF 6 www.irf.com IRF1310NPbF www.irf.com 7 IRF1310NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.5

2.2. irf1310n.pdf Size:96K _international_rectifier

IRF1310NS
IRF1310NS

PD - 91504A IRF1310N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175C Operating Temperature Fast Switching RDS(on) = 0.036? Fully Avalanche Rated G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, co

Datasheet: IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS , IRF1104 , IRF130 , IRF1310N , IRF1310NL , 2N7002 , IRF140 , IRF1404 , IRF141 , IRF142 , IRF143 , IRF150 , IRF151 , IRF153 .

 
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