All MOSFET. IRF1310NS Datasheet


IRF1310NS MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF1310NS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 160 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 42 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 73.3 nC

Maximum Drain-Source On-State Resistance (Rds): 0.036 Ohm

Package: D2PAK

IRF1310NS Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRF1310NS Datasheet (PDF)

1.1. irf1310nspbf.pdf Size:721K _update


PD- 95322 IRF1310NS/LPbF • Lead-Free 1 05/27/04 IRF1310NS/LPbF 2 IRF1310NS/LPbF 3 IRF1310NS/LPbF 4 IRF1310NS/LPbF 5 IRF1310NS/LPbF 6 IRF1310NS/LPbF 7 IRF1310NS/LPbF D2Pak Package Outline D2Pak Part Marking Information THIS IS AN IRF530S WITH PART NUMBER LOT CODE 8024 INTERNATIONAL

1.2. irf1310ns.pdf Size:156K _international_rectifier


PD - 91514B IRF1310NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS =100V Surface Mount (IRF1310NS) Low-profile through-hole (IRF1310NL) 175C Operating Temperature RDS(on) = 0.036? G Fast Switching Fully Avalanche Rated ID = 42A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

 1.3. irf1310ns.pdf Size:258K _inchange_semiconductor


Isc N-Channel MOSFET Transistor IRF1310NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

Datasheet: IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS , IRF1104 , IRF130 , IRF1310N , IRF1310NL , 2N7002 , IRF140 , IRF1404 , IRF141 , IRF142 , IRF143 , IRF150 , IRF151 , IRF153 .


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