All MOSFET. IRF1310NS Datasheet


IRF1310NS MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF1310NS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 160 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 42 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 73.3 nC

Maximum Drain-Source On-State Resistance (Rds): 0.036 Ohm

Package: D2PAK

IRF1310NS Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRF1310NS Datasheet (PDF)

0.1. irf1310ns.pdf Size:156K _international_rectifier


PD - 91514BIRF1310NS/LHEXFET Power MOSFET Advanced Process Technology DVDSS =100V Surface Mount (IRF1310NS) Low-profile through-hole (IRF1310NL) 175C Operating TemperatureRDS(on) = 0.036G Fast Switching Fully Avalanche RatedID = 42ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely

0.2. irf1310nspbf.pdf Size:721K _international_rectifier


PD- 95322IRF1310NS/LPbF 105/27/04IRF1310NS/LPbF2 www.irf.comIRF1310NS/ 3IRF1310NS/LPbF4 www.irf.comIRF1310NS/ 5IRF1310NS/LPbF6 www.irf.comIRF1310NS/ 7IRF1310NS/LPbFD2Pak Package OutlineD2Pak Part Marking InformationTHIS IS AN IRF530S WITHPART NUMBERLOT CODE 8024INTERNATIONAL

 0.3. irf1310ns.pdf Size:258K _inchange_semiconductor


Isc N-Channel MOSFET Transistor IRF1310NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

Datasheet: IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS , IRF1104 , IRF130 , IRF1310N , IRF1310NL , 2N7002 , IRF140 , IRF1404 , IRF141 , IRF142 , IRF143 , IRF150 , IRF151 , IRF153 .


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