IRF1310NS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD- 95322IRF1310NS/LPbF Lead-Freewww.irf.com 105/27/04IRF1310NS/LPbF2 www.irf.comIRF1310NS/LPbFwww.irf.com 3IRF1310NS/LPbF4 www.irf.comIRF1310NS/LPbFwww.irf.com 5IRF1310NS/LPbF6 www.irf.comIRF1310NS/LPbFwww.irf.com 7IRF1310NS/LPbFD2Pak Package OutlineD2Pak Part Marking InformationTHIS IS AN IRF530S WITHPART NUMBERLOT CODE 8024INTERNATIONAL

PD- 95322IRF1310NS/LPbF Lead-Freewww.irf.com 105/27/04IRF1310NS/LPbF2 www.irf.comIRF1310NS/LPbFwww.irf.com 3IRF1310NS/LPbF4 www.irf.comIRF1310NS/LPbFwww.irf.com 5IRF1310NS/LPbF6 www.irf.comIRF1310NS/LPbFwww.irf.com 7IRF1310NS/LPbFD2Pak Package OutlineD2Pak Part Marking InformationTHIS IS AN IRF530S WITHPART NUMBERLOT CODE 8024INTERNATIONAL

PD - 91514BIRF1310NS/LHEXFET Power MOSFET Advanced Process Technology DVDSS =100V Surface Mount (IRF1310NS) Low-profile through-hole (IRF1310NL) 175C Operating TemperatureRDS(on) = 0.036G Fast Switching Fully Avalanche RatedID = 42ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely

Isc N-Channel MOSFET Transistor IRF1310NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

PD - 95690IRF1310NPbF Lead-Freewww.irf.com8/19/04IRF1310NPbF2 www.irf.comIRF1310NPbFwww.irf.com 3IRF1310NPbF4 www.irf.comIRF1310NPbFwww.irf.com 5IRF1310NPbF6 www.irf.comIRF1310NPbFwww.irf.com 7IRF1310NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.5

PD - 91504AIRF1310NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.036 Fully Avalanche RatedGDescription ID = 42ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbene

Isc N-Channel MOSFET Transistor IRF1310NLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 10

isc N-Channel MOSFET Transistor IRF1310NIIRF1310NFEATURESStatic drain-source on-resistance:RDS(on) 0.036Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a