All MOSFET. IRF1404 Datasheet

 

IRF1404 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF1404

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 162 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 7360 pF

Maximum Drain-Source On-State Resistance (Rds): 0.004 Ohm

Package: TO220AB

IRF1404 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF1404 Datasheet (PDF)

1.1. irf1404z.pdf Size:181K _international_rectifier

IRF1404
IRF1404

PD - 11371 AUTOMOTIVE MOSFET IRF1404Z HEXFET Power MOSFET Features D ? Advanced Process Technology VDSS = 40V ? Ultra Low On-Resistance ? 175C Operating Temperature RDS(on) = 3.7m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techni

1.2. irf1404s.pdf Size:139K _international_rectifier

IRF1404
IRF1404

PD -93853B IRF1404S IRF1404L HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely

1.3. irf1404.pdf Size:107K _international_rectifier

IRF1404
IRF1404

PD -91896E IRF1404 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A S Description Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resi

1.4. irf1404l.pdf Size:306K _international_rectifier

IRF1404
IRF1404

PD -93853C IRF1404S IRF1404L HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely

1.5. irf1404z.pdf Size:2504K _kexin

IRF1404
IRF1404

DIP Type MOSFET N-Channel MOSFET IRF1404Z (KRF1404Z) TO-220 9.90 ± 0.20 4.50 ± 0.20 (8.70) +0.10 ø3.60 ± 0.10 1.30 –0.05 ■ Features ● VDS (V) = 40V ● ID = 75 A (VGS = 10V) ● RDS(ON) < 3.7mΩ (VGS = 10V) ● Fast Switching 1.27 ± 0.10 1.52 ± 0.10 ● Repetitive Avalanche Allowed up to Tjmax 2 1 3 0.80 ± 0.10 +0.10 0.50 –0.05 2.40 ± 0.20 2.54TYP 2.54T

Datasheet: IRF1010NL , IRF1010NS , IRF1104 , IRF130 , IRF1310N , IRF1310NL , IRF1310NS , IRF140 , STP75NF75 , IRF141 , IRF142 , IRF143 , IRF150 , IRF151 , IRF153 , IRF230 , IRF240 .

 


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