All MOSFET. IRF1404 Datasheet

 

IRF1404 Datasheet and Replacement


   Type Designator: IRF1404
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 202 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 131 nC
   trⓘ - Rise Time: 190 nS
   Cossⓘ - Output Capacitance: 1659 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO220AB
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IRF1404 Datasheet (PDF)

 ..1. Size:107K  international rectifier
irf1404.pdf pdf_icon

IRF1404

PD -91896EIRF1404HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.004 Fast SwitchingG Fully Avalanche RatedID = 162A SDescriptionSeventh Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low

 ..2. Size:208K  international rectifier
irf1404pbf.pdf pdf_icon

IRF1404

PD-94968BIRF1404PbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 40Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.004l Fully Avalanche RatedGl Lead-FreeID = 202ASDescriptionSeventh Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to

 ..3. Size:245K  inchange semiconductor
irf1404.pdf pdf_icon

IRF1404

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1404IIRF1404FEATURESStatic drain-source on-resistance:RDS(on) 4.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

 0.1. Size:274K  international rectifier
irf1404spbf.pdf pdf_icon

IRF1404

PD -95104IRF1404SPbFIRF1404LPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDl 175C Operating Temperature VDSS = 40Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.004Gl Lead-FreeID = 162ADescriptionSSeventh Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtec

Datasheet: IRF1010NL , IRF1010NS , IRF1104 , IRF130 , IRF1310N , IRF1310NL , IRF1310NS , IRF140 , IRF530 , IRF141 , IRF142 , IRF143 , IRF150 , IRF151 , IRF153 , IRF230 , IRF240 .

Keywords - IRF1404 MOSFET datasheet

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