IRF1404 datasheet, аналоги, основные параметры
IRF1404 - это N-канальный МОП-транзистор, предназначенный для применения в системах с высоким током и низким сопротивлением. Благодаря максимальному току 150А и низкому значению RDS(on), равному 0,004 Ом, он обеспечивает эффективное переключение питания с минимальным выделением тепла. Номинальное напряжение 55В позволяет использовать его в автомобилях, преобразователях DC-DC и схемах управления двигателями. Корпус TO220 обеспечивает простоту монтажа и отвод тепла. Быстрое переключение и прочная конструкция повышают надежность в сложных условиях эксплуатации силовой электроники, что делает IRF1404 универсальным выбором для высокопроизводительных приложений.
Наименование производителя: IRF1404 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 333 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 202 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 190 ns
Cossⓘ - Выходная емкость: 1659 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
Тип корпуса: TO220AB
📄📄 Копировать
Аналог (замена) для IRF1404
- подборⓘ MOSFET транзистора по параметрам
IRF1404 даташит
..1. Size:107K international rectifier
irf1404.pdf 
PD -91896E IRF1404 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.004 Fast Switching G Fully Avalanche Rated ID = 162A S Description Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low
..2. Size:208K international rectifier
irf1404pbf.pdf 
PD-94968B IRF1404PbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 40V l 175 C Operating Temperature l Fast Switching RDS(on) = 0.004 l Fully Avalanche Rated G l Lead-Free ID = 202A S Description Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to
..3. Size:245K inchange semiconductor
irf1404.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1404 IIRF1404 FEATURES Static drain-source on-resistance RDS(on) 4.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R
0.1. Size:274K international rectifier
irf1404spbf.pdf 
PD -95104 IRF1404SPbF IRF1404LPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 40V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.004 G l Lead-Free ID = 162A Description S Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing tec
0.2. Size:139K international rectifier
irf1404s.pdf 
PD -93853B IRF1404S IRF1404L HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.004 Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex
0.3. Size:286K international rectifier
irf1404zgpbf.pdf 
PD - 96236A IRF1404ZGPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 40V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free RDS(on) = 3.7m l Halogen-Free G Description ID = 75A S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low
0.4. Size:306K international rectifier
irf1404l.pdf 
PD -93853C IRF1404S IRF1404L HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.004 Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex
0.5. Size:274K international rectifier
irf1404lpbf irf1404spbf.pdf 
PD -95104 IRF1404SPbF IRF1404LPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = 40V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.004 G l Lead-Free ID = 162A Description S Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing tec
0.6. Size:362K international rectifier
auirf1404zstrl.pdf 
PD - 97460 AUTOMOTIVE GRADE AUIRF1404Z AUIRF1404ZS AUIRF1404ZL Features Advanced Process Technology HEXFET Power MOSFET Low On-Resistance D V(BR)DSS 40V 175 C Operating Temperature Fast Switching RDS(on) max. 3.7m Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) Lead-Free, RoHS Compliant 180A Automotive Qualified * S ID (Package Limited) 160A
0.7. Size:181K international rectifier
irf1404z.pdf 
PD - 11371 AUTOMOTIVE MOSFET IRF1404Z HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 40V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 3.7m Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest
0.8. Size:298K international rectifier
irf1404zlpbf irf1404zpbf irf1404zspbf.pdf 
PD - 96040C IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l 175 C Operating Temperature V(BR)DSS 40V D l Fast Switching RDS(on) typ. 2.7m l Repetitive Avalanche Allowed up to Tjmax max. 3.7m l Lead-Free G ID (Silicon Limited) 180A Description ID (Package Limited) 120A S This HEXFET P
0.9. Size:212K international rectifier
auirf1404.pdf 
PD-97684 AUTOMOTIVE GRADE AUIRF1404 Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS 40V l Dynamic dv/dt Rating RDS(on) typ. 3.5m l 175 C Operating Temperature max 4.0m l Fast Switching G ID (Silicon Limited) 202A l Fully Avalanche Rated S l Repetitive Avalanche Allowed ID (Package Limited) 160A up to Tjmax l Lead-Free
0.10. Size:302K international rectifier
irf1404zpbf irf1404zspbf irf1404zlpbf.pdf 
PD - 96040C IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l 175 C Operating Temperature V(BR)DSS 40V D l Fast Switching RDS(on) typ. 2.7m l Repetitive Avalanche Allowed up to Tjmax max. 3.7m l Lead-Free G ID (Silicon Limited) 180A Description ID (Package Limited) 120A S This HEXFET P
0.11. Size:303K infineon
auirf1404s auirf1404l.pdf 
AUIRF1404S AUTOMOTIVE GRADE AUIRF1404L HEXFET Power MOSFET Features Advanced Planar Technology VDSS 40V Dynamic dv/dt Rating RDS(on) typ. 3.5m 175 C Operating Temperature max. 4.0m Fast Switching ID (Silicon Limited) 162A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-F
0.12. Size:383K infineon
auirf1404z auirf1404zs auirf1404zl.pdf 
AUIRF1404Z AUIRF1404ZS AUTOMOTIVE GRADE AUIRF1404ZL HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) max. 3.7m 175 C Operating Temperature ID (Silicon Limited) 180A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Auto
0.13. Size:2504K kexin
irf1404z.pdf 
DIP Type MOSFET N-Channel MOSFET IRF1404Z (KRF1404Z) TO-220 9.90 0.20 4.50 0.20 (8.70) +0.10 3.60 0.10 1.30 0.05 Features VDS (V) = 40V ID = 75 A (VGS = 10V) RDS(ON) 3.7m (VGS = 10V) Fast Switching 1.27 0.10 1.52 0.10 Repetitive Avalanche Allowed up to Tjmax 2 1 3 0.80 0.10 +0.10 0.50 0.05 2.40 0.20 2.54TYP 2.54T
0.14. Size:252K inchange semiconductor
irf1404s.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1404S FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM
0.15. Size:258K inchange semiconductor
irf1404zs.pdf 
Isc N-Channel MOSFET Transistor IRF1404ZS FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol
0.16. Size:245K inchange semiconductor
irf1404z.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1404Z IIRF1404Z FEATURES Static drain-source on-resistance RDS(on) 3.7m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM
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