All MOSFET. IRF230 Datasheet


IRF230 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF230

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 39 nC

Rise Time (tr): 50 nS

Drain-Source Capacitance (Cd): 250 pF

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: TO3

IRF230 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRF230 Datasheet (PDF)

1.1. irf230 irf231 irf232 irf233.pdf Size:216K _upd


1.2. irf630-6333 irf230-233 mtp12n18-20.pdf Size:177K _fairchild_semi


 1.3. 2n6758 irf230.pdf Size:147K _international_rectifier


PD - 90334F IRF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758 HEXFET?TRANSISTORS JANTXV2N6758 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF230 200V 0.40? 9.0A TO-3 The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing

Datasheet: IRF140 , IRF1404 , IRF141 , IRF142 , IRF143 , IRF150 , IRF151 , IRF153 , IRF1010E , IRF240 , IRF250 , IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S .


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