IRF230 Specs and Replacement
Type Designator: IRF230
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50(max) nS
Cossⓘ - Output Capacitance: 450(max) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO3
IRF230 substitution
IRF230 Specs
irf630 irf631 irf632 irf633 irf230 irf231 irf232 irf233 mtp12n18 mtp12n20.pdf
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2n6758 irf230.pdf
PD - 90334F IRF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758 HEXFET TRANSISTORS JANTXV2N6758 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF230 200V 0.40 9.0A TO-3 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique... See More ⇒
Detailed specifications: IRF140 , IRF1404 , IRF141 , IRF142 , IRF143 , IRF150 , IRF151 , IRF153 , AO4407 , IRF240 , IRF250 , IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S .
Keywords - IRF230 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
