All MOSFET. IRF230 Datasheet


IRF230 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF230

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 30(max) nC

Rise Time (tr): 50(max) nS

Drain-Source Capacitance (Cd): 450(max) pF

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: TO3

IRF230 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRF230 Datasheet (PDF)

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PD - 90334F IRF230REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758HEXFETTRANSISTORS JANTXV2N6758THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF230 200V 0.40 9.0ATO-3The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique

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Datasheet: IRF140 , IRF1404 , IRF141 , IRF142 , IRF143 , IRF150 , IRF151 , IRF153 , 5N50 , IRF240 , IRF250 , IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S .


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