IRF230 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF230

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 30(max) nC

Rise Time (tr): 50(max) nS

Drain-Source Capacitance (Cd): 450(max) pF

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: TO3

IRF230 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF230 Datasheet (PDF)

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