IRF230 Datasheet and Replacement
Type Designator: IRF230
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 30(max) nC
tr ⓘ - Rise Time: 50(max) nS
Cossⓘ - Output Capacitance: 450(max) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO3
IRF230 substitution
IRF230 Datasheet (PDF)
2n6758 irf230.pdf

PD - 90334F IRF230REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758HEXFETTRANSISTORS JANTXV2N6758THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF230 200V 0.40 9.0ATO-3The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique
Datasheet: IRF140 , IRF1404 , IRF141 , IRF142 , IRF143 , IRF150 , IRF151 , IRF153 , P60NF06 , IRF240 , IRF250 , IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S .
History: CM5N50
Keywords - IRF230 MOSFET datasheet
IRF230 cross reference
IRF230 equivalent finder
IRF230 lookup
IRF230 substitution
IRF230 replacement
History: CM5N50



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