IRF230 MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRF230
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30(max) nC
   trⓘ - Rise Time: 50(max) nS
   Cossⓘ - Output Capacitance: 450(max) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO3

IRF230 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF230 Datasheet (PDF)

..1. Size:177K 1
irf630 irf631 irf632 irf633 irf230 irf231 irf232 irf233 mtp12n18 mtp12n20.pdf

..2. Size:147K international rectifier
2n6758 irf230.pdf

PD - 90334F IRF230REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758HEXFETTRANSISTORS JANTXV2N6758THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF230 200V 0.40 9.0ATO-3The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique

..3. Size:216K samsung
irf230 irf231 irf232 irf233.pdf