IRF1310NL MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF1310NL

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 160 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 42 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 110(max) nC

Rise Time (tr): 56 nS

Drain-Source Capacitance (Cd): 450 pF

Maximum Drain-Source On-State Resistance (Rds): 0.036 Ohm

Package: TO262

IRF1310NL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF1310NL Datasheet (PDF)

..1. Size:721K infineon
irf1310nspbf irf1310nlpbf.pdf

PD- 95322IRF1310NS/LPbF Lead-Freewww.irf.com 105/27/04IRF1310NS/LPbF2 www.irf.comIRF1310NS/LPbFwww.irf.com 3IRF1310NS/LPbF4 www.irf.comIRF1310NS/LPbFwww.irf.com 5IRF1310NS/LPbF6 www.irf.comIRF1310NS/LPbFwww.irf.com 7IRF1310NS/LPbFD2Pak Package OutlineD2Pak Part Marking InformationTHIS IS AN IRF530S WITHPART NUMBERLOT CODE 8024INTERNATIONAL

..2. Size:256K inchange semiconductor
irf1310nl.pdf

Isc N-Channel MOSFET Transistor IRF1310NLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 10

6.1. Size:96K international rectifier
irf1310n.pdf

PD - 91504AIRF1310NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.036 Fully Avalanche RatedGDescription ID = 42ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbene

6.2. Size:594K international rectifier
irf1310npbf.pdf

PD - 95690IRF1310NPbF Lead-Freewww.irf.com8/19/04IRF1310NPbF2 www.irf.comIRF1310NPbFwww.irf.com 3IRF1310NPbF4 www.irf.comIRF1310NPbFwww.irf.com 5IRF1310NPbF6 www.irf.comIRF1310NPbFwww.irf.com 7IRF1310NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.5

6.3. Size:156K international rectifier
irf1310ns.pdf

PD - 91514BIRF1310NS/LHEXFET Power MOSFET Advanced Process Technology DVDSS =100V Surface Mount (IRF1310NS) Low-profile through-hole (IRF1310NL) 175C Operating TemperatureRDS(on) = 0.036G Fast Switching Fully Avalanche RatedID = 42ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely

6.4. Size:721K international rectifier
irf1310nspbf.pdf

6.5. Size:594K infineon
irf1310npbf.pdf

6.6. Size:245K inchange semiconductor
irf1310n.pdf

isc N-Channel MOSFET Transistor IRF1310NIIRF1310NFEATURESStatic drain-source on-resistance:RDS(on) 0.036Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

6.7. Size:258K inchange semiconductor
irf1310ns.pdf

Isc N-Channel MOSFET Transistor IRF1310NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

Datasheet: IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS , IRF1104 , IRF130 , IRF1310N , IRF1405 , IRF1310NS , IRF140 , IRF1404 , IRF141 , IRF142 , IRF143 , IRF150 , IRF151 .

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All MOSFET. IRF1310NL Datasheet

IRF1310NL MOSFET. Datasheet pdf. Equivalent

IRF1310NL Datasheet (PDF)

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