IRF1310NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF1310NL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 160 W
Tensión drenaje-fuente (Vds): 100 V
Tensión compuerta-fuente (Vgs): 10 V
Corriente continua de drenaje (Id): 42 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Carga de compuerta (Qg): 73.3 nC
Resistencia drenaje-fuente RDS(on): 0.036 Ohm
Empaquetado / Estuche: TO262
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IRF1310NL Datasheet (PDF)
2.1. irf1310npbf.pdf 
Size:594K _update
PD - 95690 IRF1310NPbF • Lead-Free www.irf.com 8/19/04 IRF1310NPbF 2 www.irf.com IRF1310NPbF www.irf.com 3 IRF1310NPbF 4 www.irf.com IRF1310NPbF www.irf.com 5 IRF1310NPbF 6 www.irf.com IRF1310NPbF www.irf.com 7 IRF1310NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.5
2.2. irf1310nspbf.pdf Size:721K _update
PD- 95322 IRF1310NS/LPbF • Lead-Free www.irf.com 1 05/27/04 IRF1310NS/LPbF 2 www.irf.com IRF1310NS/LPbF www.irf.com 3 IRF1310NS/LPbF 4 www.irf.com IRF1310NS/LPbF www.irf.com 5 IRF1310NS/LPbF 6 www.irf.com IRF1310NS/LPbF www.irf.com 7 IRF1310NS/LPbF D2Pak Package Outline D2Pak Part Marking Information THIS IS AN IRF530S WITH PART NUMBER LOT CODE 8024 INTERNATIONAL
2.3. irf1310n.pdf Size:96K _international_rectifier
PD - 91504A IRF1310N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175C Operating Temperature Fast Switching RDS(on) = 0.036? Fully Avalanche Rated G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, co
2.4. irf1310ns.pdf Size:156K _international_rectifier
PD - 91514B IRF1310NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS =100V Surface Mount (IRF1310NS) Low-profile through-hole (IRF1310NL) 175C Operating Temperature RDS(on) = 0.036? G Fast Switching Fully Avalanche Rated ID = 42A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-
Otros transistores... IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS , IRF1104 , IRF130 , IRF1310N , J310 , IRF1310NS , IRF140 , IRF1404 , IRF141 , IRF142 , IRF143 , IRF150 , IRF151 .
