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BUZ11 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUZ11

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 120 W

Tensión drenaje-fuente (Vds): 50 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 36 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Conductancia de drenaje-sustrato (Cd): 1500 pF

Resistencia drenaje-fuente RDS(on): 0.04 Ohm

Empaquetado / Estuche: TO220

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BUZ11 Datasheet (PDF)

1.1. buz111sl.pdf Size:77K _update_mosfet

BUZ11
BUZ11

BUZ111SL SPP80N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ111SL 55 V 80 A 0.01 Ω TO-220 AB Q67040-S4003-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current

1.2. buz11al.pdf Size:332K _update_mosfet

BUZ11
BUZ11



 1.3. buz111s.pdf Size:112K _update_mosfet

BUZ11
BUZ11

BUZ 111S SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS • N channel Drain-Source on-state resistance 0.008 RDS(on) Ω • Enhancement mode Continuous drain current 80 A ID • Avalanche rated • dv/dt rated • 175˚C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ111S P-TO220-3-1 Q67040-S4003-A2 Tub

1.4. buz110s.pdf Size:88K _update_mosfet

BUZ11
BUZ11

BUZ 110 S SPP80N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 110 S 55 V 80 A 0.012 Ω TO-220 AB Q67040-S4005-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25

 1.5. buz11a.pdf Size:116K _st

BUZ11
BUZ11

BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V R I DSS DS(on) D BUZ11A 50 V < 0.055 ? 27 A TYPICAL RDS(on) = 0.048 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE 3 HIGH CURRENT CAPABILITY 2 1 175oC OPERATING TEMPERATURE APPLICATIONS TO-220 HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVE

1.6. buz11.pdf Size:173K _st

BUZ11
BUZ11

BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V R I DSS DS(on) D BUZ11 50 V < 0.04 ? 36 A BUZ11FI 50 V < 0.04 ? 21 A TYPICAL RDS(on) = 0.03 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 1 1 HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE TO-220 ISOWATT220 APPLICATIONS HIGH CURRE

1.7. buz11s2 buz11s2fi.pdf Size:384K _st2

BUZ11
BUZ11

1.8. buz11.pdf Size:81K _fairchild_semi

BUZ11
BUZ11

BUZ11 Data Sheet June 1999 File Number 2253.2 30A, 50V, 0.040 Ohm, N-Channel Power Features MOSFET 30A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.040? (BUZ1 field effect transistor designed for applications such as SOA is Power Dissipation Limited 1) switching regulators, switching converters, motor drivers, Nanosecond Switching Speed

1.9. buz110sl.pdf Size:104K _infineon

BUZ11
BUZ11

BUZ 110SL SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.01 RDS(on) ? Enhancement mode Continuous drain current 80 A ID Avalanche rated Logic Level dv/dt rated 175?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ110SL P-TO220-3-1 Q67040-S4004-A2 Tube

1.10. buz111sl.pdf Size:101K _infineon

BUZ11
BUZ11

BUZ 111SL SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.007 RDS(on) ? Enhancement mode Continuous drain current 80 A ID Avalanche rated Logic Level dv/dt rated 175?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ111SL P-TO220-3-1 Q67040-S4002-A2 Tube

1.11. buz111s.pdf Size:103K _infineon

BUZ11
BUZ11

BUZ 111S SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.008 RDS(on) ? Enhancement mode Continuous drain current 80 A ID Avalanche rated dv/dt rated 175?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ111S P-TO220-3-1 Q67040-S4003-A2 Tube BUZ111S E3045A

1.12. buz110s.pdf Size:126K _infineon

BUZ11
BUZ11

BUZ 110S SIPMOS? Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.01 RDS(on) ? Enhancement mode Continuous drain current 80 A ID Avalanche rated dv/dt rated 175 ?C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ110S P-TO220-3-1 Q67040-S4005-A2 Tube BUZ110S E3045A

Otros transistores... BUP66 , BUP67 , BUP68 , BUP69 , BUP70 , BUP71 , BUZ10 , BUZ10A , IRF630 , BUZ11A , BUZ11FI , BUZ20 , BUZ21 , BUZ23 , BUZ24 , BUZ25 , BUZ32 .

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