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BUZ11 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUZ11

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 120 W

Tensión drenaje-fuente |Vds|: 50 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 36 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Conductancia de drenaje-sustrato (Cd): 1500 pF

Resistencia drenaje-fuente RDS(on): 0.04 Ohm

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de MOSFET BUZ11

 

BUZ11 Datasheet (PDF)

0.1. buz11a.pdf Size:116K _st

BUZ11
BUZ11

BUZ11AN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE V R IDSS DS(on) DBUZ11A 50 V

0.2. buz11s2 buz11s2fi.pdf Size:384K _st

BUZ11
BUZ11

 0.3. buz11.pdf Size:173K _st

BUZ11
BUZ11

BUZ11BUZ11FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE V R IDSS DS(on) DBUZ11 50 V

0.4. buz11.pdf Size:81K _fairchild_semi

BUZ11
BUZ11

BUZ11Data Sheet June 1999 File Number 2253.230A, 50V, 0.040 Ohm, N-Channel Power FeaturesMOSFET 30A, 50V[ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.040(BUZ1field effect transistor designed for applications such as SOA is Power Dissipation Limited1) switching regulators, switching converters, motor drivers, Nanosecond Sw

 0.5. buz110s spp80n05.pdf Size:88K _siemens

BUZ11
BUZ11

BUZ 110 SSPP80N05SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature also in SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 110 S 55 V 80 A 0.012 TO-220 AB Q67040-S4005-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25

0.6. buz111sl spp80n05l.pdf Size:77K _siemens

BUZ11
BUZ11

BUZ111SLSPP80N05LSIPMOS Power Transistor N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175C operating temperature also in SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ111SL 55 V 80 A 0.01 TO-220 AB Q67040-S4003-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current

0.7. buz11al.pdf Size:332K _siemens

BUZ11
BUZ11

0.8. buz110s.pdf Size:126K _infineon

BUZ11
BUZ11

BUZ 110SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.01RDS(on) Enhancement modeContinuous drain current 80 AID Avalanche rated dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ110S P-TO220-3-1 Q67040-S4005-A2 Tub

0.9. buz111sl.pdf Size:101K _infineon

BUZ11
BUZ11

BUZ 111SLSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.007RDS(on) Enhancement modeContinuous drain current 80 AID Avalanche rated Logic Level dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ111SL P-TO220-3-1

0.10. buz111s.pdf Size:112K _infineon

BUZ11
BUZ11

BUZ 111SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.008RDS(on) Enhancement modeContinuous drain current 80 AID Avalanche rated dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ111S P-TO220-3-1 Q67040-S4003-A2 Tub

0.11. buz110sl.pdf Size:104K _infineon

BUZ11
BUZ11

BUZ 110SLSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.01RDS(on) Enhancement modeContinuous drain current 80 AID Avalanche rated Logic Level dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ110SL P-TO220-3-1 Q

0.12. buz11a.pdf Size:229K _inchange_semiconductor

BUZ11
BUZ11

isc N-Channel Mosfet Transistor BUZ11AFEATURESStatic Drain-Source On-Resistance: R = 0.055(Max)DS(on)Avalanche rugged technologyHigh current capability175 Operating TemperatureHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current,high speed switchingSolenoid and relay drivers

0.13. buz11s2.pdf Size:229K _inchange_semiconductor

BUZ11
BUZ11

isc N-Channel Mosfet Transistor BUZ11S2FEATURESStatic Drain-Source On-Resistance: R = 0.04(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,re

0.14. buz11.pdf Size:228K _inchange_semiconductor

BUZ11
BUZ11

isc N-Channel Mosfet Transistor BUZ11FEATURESStatic Drain-Source On-Resistance: R = 0.04(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,rela

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