All MOSFET. BUZ11 Datasheet

 

BUZ11 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BUZ11
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 120 W
   Maximum Drain-Source Voltage |Vds|: 50 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 36 A
   Maximum Junction Temperature (Tj): 150 °C
   Drain-Source Capacitance (Cd): 1500 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm
   Package: TO220

 BUZ11 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUZ11 Datasheet (PDF)

 ..1. Size:173K  st
buz11.pdf

BUZ11
BUZ11

BUZ11BUZ11FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE V R IDSS DS(on) DBUZ11 50 V

 ..2. Size:81K  fairchild semi
buz11.pdf

BUZ11
BUZ11

BUZ11Data Sheet June 1999 File Number 2253.230A, 50V, 0.040 Ohm, N-Channel Power FeaturesMOSFET 30A, 50V[ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.040(BUZ1field effect transistor designed for applications such as SOA is Power Dissipation Limited1) switching regulators, switching converters, motor drivers, Nanosecond Sw

 ..3. Size:218K  onsemi
buz11.pdf

BUZ11
BUZ11

BUZ11Data Sheet September 2013 File Number 2253.2FeaturesN-Channel Power MOSFET50V, 30A, 40 m 30A, 50VThis is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.040field effect transistor designed for applications such as SOA is Power Dissipation Limitedswitching regulators, switching converters, motor drivers, Nanosecond Switching Speedsre

 ..4. Size:228K  inchange semiconductor
buz11.pdf

BUZ11
BUZ11

isc N-Channel Mosfet Transistor BUZ11FEATURESStatic Drain-Source On-Resistance: R = 0.04(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,rela

 0.1. Size:116K  st
buz11a.pdf

BUZ11
BUZ11

BUZ11AN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE V R IDSS DS(on) DBUZ11A 50 V

 0.2. Size:384K  st
buz11s2 buz11s2fi.pdf

BUZ11
BUZ11

 0.3. Size:88K  siemens
buz110s spp80n05.pdf

BUZ11
BUZ11

BUZ 110 SSPP80N05SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature also in SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 110 S 55 V 80 A 0.012 TO-220 AB Q67040-S4005-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25

 0.4. Size:77K  siemens
buz111sl spp80n05l.pdf

BUZ11
BUZ11

BUZ111SLSPP80N05LSIPMOS Power Transistor N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175C operating temperature also in SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ111SL 55 V 80 A 0.01 TO-220 AB Q67040-S4003-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current

 0.5. Size:332K  siemens
buz11al.pdf

BUZ11
BUZ11

 0.6. Size:126K  infineon
buz110s.pdf

BUZ11
BUZ11

BUZ 110SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.01RDS(on) Enhancement modeContinuous drain current 80 AID Avalanche rated dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ110S P-TO220-3-1 Q67040-S4005-A2 Tub

 0.7. Size:101K  infineon
buz111sl.pdf

BUZ11
BUZ11

BUZ 111SLSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.007RDS(on) Enhancement modeContinuous drain current 80 AID Avalanche rated Logic Level dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ111SL P-TO220-3-1

 0.8. Size:112K  infineon
buz111s.pdf

BUZ11
BUZ11

BUZ 111SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.008RDS(on) Enhancement modeContinuous drain current 80 AID Avalanche rated dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ111S P-TO220-3-1 Q67040-S4003-A2 Tub

 0.9. Size:104K  infineon
buz110sl.pdf

BUZ11
BUZ11

BUZ 110SLSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.01RDS(on) Enhancement modeContinuous drain current 80 AID Avalanche rated Logic Level dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ110SL P-TO220-3-1 Q

 0.10. Size:229K  inchange semiconductor
buz11a.pdf

BUZ11
BUZ11

isc N-Channel Mosfet Transistor BUZ11AFEATURESStatic Drain-Source On-Resistance: R = 0.055(Max)DS(on)Avalanche rugged technologyHigh current capability175 Operating TemperatureHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current,high speed switchingSolenoid and relay drivers

 0.11. Size:229K  inchange semiconductor
buz11s2.pdf

BUZ11
BUZ11

isc N-Channel Mosfet Transistor BUZ11S2FEATURESStatic Drain-Source On-Resistance: R = 0.04(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,re

Datasheet: BUP66 , BUP67 , BUP68 , BUP69 , BUP70 , BUP71 , BUZ10 , BUZ10A , IRF640 , BUZ11A , BUZ11FI , BUZ20 , BUZ21 , BUZ23 , BUZ24 , BUZ25 , BUZ32 .

 

 
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