All MOSFET. BUZ11 Datasheet

 

BUZ11 MOSFET. Datasheet pdf. Equivalent

Type Designator: BUZ11

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 50 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 36 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 1500 pF

Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm

Package: TO220

BUZ11 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUZ11 Datasheet (PDF)

0.1. buz11a.pdf Size:116K _st

BUZ11
BUZ11

BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V R I DSS DS(on) D BUZ11A 50 V < 0.055 Ω 27 A TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE 3 HIGH CURRENT CAPABILITY 2 1 175oC OPERATING TEMPERATURE APPLICATIONS TO-220 HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELA

0.2. buz11s2 buz11s2fi.pdf Size:384K _st

BUZ11
BUZ11



 0.3. buz11.pdf Size:173K _st

BUZ11
BUZ11

BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V R I DSS DS(on) D BUZ11 50 V < 0.04 Ω 36 A BUZ11FI 50 V < 0.04 Ω 21 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 1 1 HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE TO-220 ISOWATT220 APPLICATIONS H

0.4. buz11.pdf Size:81K _fairchild_semi

BUZ11
BUZ11

BUZ11 Data Sheet June 1999 File Number 2253.2 30A, 50V, 0.040 Ohm, N-Channel Power Features MOSFET • 30A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.040Ω (BUZ1 field effect transistor designed for applications such as • SOA is Power Dissipation Limited 1) switching regulators, switching converters, motor drivers, • Nanosecond Sw

 0.5. buz110s spp80n05.pdf Size:88K _siemens

BUZ11
BUZ11

BUZ 110 S SPP80N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 110 S 55 V 80 A 0.012 Ω TO-220 AB Q67040-S4005-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25

0.6. buz111sl spp80n05l.pdf Size:77K _siemens

BUZ11
BUZ11

BUZ111SL SPP80N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ111SL 55 V 80 A 0.01 Ω TO-220 AB Q67040-S4003-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current

0.7. buz11al.pdf Size:332K _siemens

BUZ11
BUZ11



0.8. buz110s.pdf Size:126K _infineon

BUZ11
BUZ11

BUZ 110S SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS • N channel Drain-Source on-state resistance 0.01 RDS(on) Ω • Enhancement mode Continuous drain current 80 A ID • Avalanche rated • dv/dt rated • 175 ˚C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ110S P-TO220-3-1 Q67040-S4005-A2 Tub

0.9. buz111sl.pdf Size:101K _infineon

BUZ11
BUZ11

BUZ 111SL SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS • N channel Drain-Source on-state resistance 0.007 RDS(on) Ω • Enhancement mode Continuous drain current 80 A ID • Avalanche rated • Logic Level • dv/dt rated • 175˚C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ111SL P-TO220-3-1

0.10. buz111s.pdf Size:112K _infineon

BUZ11
BUZ11

BUZ 111S SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS • N channel Drain-Source on-state resistance 0.008 RDS(on) Ω • Enhancement mode Continuous drain current 80 A ID • Avalanche rated • dv/dt rated • 175˚C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ111S P-TO220-3-1 Q67040-S4003-A2 Tub

0.11. buz110sl.pdf Size:104K _infineon

BUZ11
BUZ11

BUZ 110SL SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS • N channel Drain-Source on-state resistance 0.01 RDS(on) Ω • Enhancement mode Continuous drain current 80 A ID • Avalanche rated • Logic Level • dv/dt rated • 175˚C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ110SL P-TO220-3-1 Q

0.12. buz11a.pdf Size:229K _inchange_semiconductor

BUZ11
BUZ11

isc N-Channel Mosfet Transistor BUZ11A ·FEATURES ·Static Drain-Source On-Resistance : R = 0.055Ω(Max) DS(on) ·Avalanche rugged technology ·High current capability ·175℃ Operating Temperature ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current,high speed switching ·Solenoid and relay drivers

0.13. buz11s2.pdf Size:229K _inchange_semiconductor

BUZ11
BUZ11

isc N-Channel Mosfet Transistor BUZ11S2 ·FEATURES ·Static Drain-Source On-Resistance : R = 0.04Ω(Max) DS(on) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,re

0.14. buz11.pdf Size:228K _inchange_semiconductor

BUZ11
BUZ11

isc N-Channel Mosfet Transistor BUZ11 ·FEATURES ·Static Drain-Source On-Resistance : R = 0.04Ω(Max) DS(on) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,rela

Datasheet: BUP66 , BUP67 , BUP68 , BUP69 , BUP70 , BUP71 , BUZ10 , BUZ10A , IRF630 , BUZ11A , BUZ11FI , BUZ20 , BUZ21 , BUZ23 , BUZ24 , BUZ25 , BUZ32 .

 

 
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