All MOSFET. BUZ11 Datasheet

 

BUZ11 MOSFET. Datasheet pdf. Equivalent

Type Designator: BUZ11

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 50 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 36 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 1500 pF

Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm

Package: TO220

BUZ11 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUZ11 Datasheet (PDF)

..1. buz11.pdf Size:173K _st

BUZ11 BUZ11

BUZ11BUZ11FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE V R IDSS DS(on) DBUZ11 50 V

..2. buz11.pdf Size:81K _fairchild_semi

BUZ11 BUZ11

BUZ11Data Sheet June 1999 File Number 2253.230A, 50V, 0.040 Ohm, N-Channel Power FeaturesMOSFET 30A, 50V[ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.040(BUZ1field effect transistor designed for applications such as SOA is Power Dissipation Limited1) switching regulators, switching converters, motor drivers, Nanosecond Sw

..3. buz11.pdf Size:218K _onsemi

BUZ11 BUZ11

BUZ11Data Sheet September 2013 File Number 2253.2FeaturesN-Channel Power MOSFET50V, 30A, 40 m 30A, 50VThis is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.040field effect transistor designed for applications such as SOA is Power Dissipation Limitedswitching regulators, switching converters, motor drivers, Nanosecond Switching Speedsre

..4. buz11.pdf Size:228K _inchange_semiconductor

BUZ11 BUZ11

isc N-Channel Mosfet Transistor BUZ11FEATURESStatic Drain-Source On-Resistance: R = 0.04(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,rela

0.1. buz11a.pdf Size:116K _st

BUZ11 BUZ11

BUZ11AN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE V R IDSS DS(on) DBUZ11A 50 V

0.2. buz11s2 buz11s2fi.pdf Size:384K _st

BUZ11 BUZ11

 

 

 0.3. buz110s spp80n05.pdf Size:88K _siemens

BUZ11 BUZ11

BUZ 110 SSPP80N05SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature also in SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 110 S 55 V 80 A 0.012 TO-220 AB Q67040-S4005-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 25

0.4. buz111sl spp80n05l.pdf Size:77K _siemens

BUZ11 BUZ11

BUZ111SLSPP80N05LSIPMOS Power Transistor N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175C operating temperature also in SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ111SL 55 V 80 A 0.01 TO-220 AB Q67040-S4003-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current

 0.5. buz11al.pdf Size:332K _siemens

BUZ11 BUZ11

0.6. buz110s.pdf Size:126K _infineon

BUZ11 BUZ11

BUZ 110SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.01RDS(on) Enhancement modeContinuous drain current 80 AID Avalanche rated dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ110S P-TO220-3-1 Q67040-S4005-A2 Tub

0.7. buz111sl.pdf Size:101K _infineon

BUZ11 BUZ11

BUZ 111SLSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.007RDS(on) Enhancement modeContinuous drain current 80 AID Avalanche rated Logic Level dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ111SL P-TO220-3-1

0.8. buz111s.pdf Size:112K _infineon

BUZ11 BUZ11

BUZ 111SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.008RDS(on) Enhancement modeContinuous drain current 80 AID Avalanche rated dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ111S P-TO220-3-1 Q67040-S4003-A2 Tub

0.9. buz110sl.pdf Size:104K _infineon

BUZ11 BUZ11

BUZ 110SLSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.01RDS(on) Enhancement modeContinuous drain current 80 AID Avalanche rated Logic Level dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ110SL P-TO220-3-1 Q

0.10. buz11a.pdf Size:229K _inchange_semiconductor

BUZ11 BUZ11

isc N-Channel Mosfet Transistor BUZ11AFEATURESStatic Drain-Source On-Resistance: R = 0.055(Max)DS(on)Avalanche rugged technologyHigh current capability175 Operating TemperatureHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh current,high speed switchingSolenoid and relay drivers

0.11. buz11s2.pdf Size:229K _inchange_semiconductor

BUZ11 BUZ11

isc N-Channel Mosfet Transistor BUZ11S2FEATURESStatic Drain-Source On-Resistance: R = 0.04(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,re

Datasheet: BUP66 , BUP67 , BUP68 , BUP69 , BUP70 , BUP71 , BUZ10 , BUZ10A , STP65NF06 , BUZ11A , BUZ11FI , BUZ20 , BUZ21 , BUZ23 , BUZ24 , BUZ25 , BUZ32 .

 

 
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