BUZ20 Todos los transistores

 

BUZ20 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUZ20
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: TO220M

 Búsqueda de reemplazo de MOSFET BUZ20

 

BUZ20 Datasheet (PDF)

 ..1. Size:273K  st
buz20.pdf

BUZ20
BUZ20

 ..2. Size:90K  infineon
buz20.pdf

BUZ20
BUZ20

BUZ 20SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 20 100 V 13.5 A 0.2 TO-220 AB C67078-S1302-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 13.5Pulsed drain current IDpulsTC = 25 C 54Avalanche current,limited by Tjmax IA

 ..3. Size:229K  inchange semiconductor
buz20.pdf

BUZ20
BUZ20

isc N-Channel Mosfet Transistor BUZ20FEATURESStatic Drain-Source On-Resistance: R = 0.2(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay

 0.1. Size:186K  siemens
buz202.pdf

BUZ20
BUZ20

 0.2. Size:176K  siemens
buz206.pdf

BUZ20
BUZ20

 0.3. Size:181K  siemens
buz201.pdf

BUZ20
BUZ20

 0.4. Size:336K  siemens
buz205.pdf

BUZ20
BUZ20

SIPMOS Power Transistor BUZ 205 N channel Enhancement mode FREDFETType VDS ID RDS (on) Package 1) Ordering CodeBUZ 205 400 V 6.0 A 1.0 TO-220 AB C67078-A1401-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current, TC = 35 C ID 6.0 APulsed drain current, TC = 25 C ID puls 24Drain-source voltage VDS 400 VDrain-gate voltage, RGS = 20 k VDGR 400Ga

 0.5. Size:223K  inchange semiconductor
buz202.pdf

BUZ20
BUZ20

isc N-Channel Mosfet Transistor BUZ202FEATURESStatic Drain-Source On-Resistance: R = 0.5(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,rela

 0.6. Size:228K  inchange semiconductor
buz206.pdf

BUZ20
BUZ20

isc N-Channel Mosfet Transistor BUZ206FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC converters r .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-S

 0.7. Size:223K  inchange semiconductor
buz201.pdf

BUZ20
BUZ20

isc N-Channel Mosfet Transistor BUZ201FEATURESStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,rela

 0.8. Size:228K  inchange semiconductor
buz205.pdf

BUZ20
BUZ20

isc N-Channel Mosfet Transistor BUZ205FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC converters r .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-S

Otros transistores... BUP69 , BUP70 , BUP71 , BUZ10 , BUZ10A , BUZ11 , BUZ11A , BUZ11FI , 10N60 , BUZ21 , BUZ23 , BUZ24 , BUZ25 , BUZ32 , BUZ35 , BUZ36 , BUZ41A .

 

 
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