BUZ20 Todos los transistores

 

BUZ20 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUZ20

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 75 W

Tensión drenaje-fuente (Vds): 100 V

Corriente continua de drenaje (Id): 14 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.2 Ohm

Empaquetado / Estuche: TO220M

Búsqueda de reemplazo de MOSFET BUZ20

 

BUZ20 Datasheet (PDF)

1.1. buz202.pdf Size:186K _update_mosfet

BUZ20
BUZ20



1.2. buz201.pdf Size:181K _update_mosfet

BUZ20
BUZ20



 1.3. buz206.pdf Size:176K _update_mosfet

BUZ20
BUZ20



1.4. buz205.pdf Size:336K _update-mosfet

BUZ20
BUZ20

SIPMOS® Power Transistor BUZ 205 N channel Enhancement mode FREDFET Type VDS ID RDS (on) Package 1) Ordering Code BUZ 205 400 V 6.0 A 1.0 Ω TO-220 AB C67078-A1401-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current, TC = 35 ˚C ID 6.0 A Pulsed drain current, TC = 25 ˚C ID puls 24 Drain-source voltage VDS 400 V Drain-gate voltage, RGS = 20 kΩ VDGR 400 Ga

 1.5. buz20.pdf Size:273K _st2

BUZ20
BUZ20

1.6. buz20.pdf Size:90K _infineon

BUZ20
BUZ20

BUZ 20 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 20 100 V 13.5 A 0.2 ? TO-220 AB C67078-S1302-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 28 ?C 13.5 Pulsed drain current IDpuls TC = 25 ?C 54 Avalanche current,limited by Tjmax IAR 13.5 Avalan

1.7. buz202.pdf Size:223K _inchange_semiconductor

BUZ20
BUZ20

isc N-Channel Mosfet Transistor BUZ202 ·FEATURES ·Static Drain-Source On-Resistance : R = 0.5Ω(Max) DS(on) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,rela

1.8. buz205.pdf Size:228K _inchange_semiconductor

BUZ20
BUZ20

isc N-Channel Mosfet Transistor BUZ205 ·FEATURES ·High speed switching ·Low R DS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Automotive power actuator drivers ·Motor controls ·DC-DC converters r . ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-S

1.9. buz201.pdf Size:223K _inchange_semiconductor

BUZ20
BUZ20

isc N-Channel Mosfet Transistor BUZ201 ·FEATURES ·Static Drain-Source On-Resistance : R = 0.4Ω(Max) DS(on) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,rela

1.10. buz206.pdf Size:228K _inchange_semiconductor

BUZ20
BUZ20

isc N-Channel Mosfet Transistor BUZ206 ·FEATURES ·High speed switching ·Low R DS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Automotive power actuator drivers ·Motor controls ·DC-DC converters r . ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-S

1.11. buz20.pdf Size:229K _inchange_semiconductor

BUZ20
BUZ20

isc N-Channel Mosfet Transistor BUZ20 ·FEATURES ·Static Drain-Source On-Resistance : R = 0.2Ω(Max) DS(on) ·SOA is Power Dissipation Limited ·High input impedance ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay

Otros transistores... BUP69 , BUP70 , BUP71 , BUZ10 , BUZ10A , BUZ11 , BUZ11A , BUZ11FI , IRF530 , BUZ21 , BUZ23 , BUZ24 , BUZ25 , BUZ32 , BUZ35 , BUZ36 , BUZ41A .

 

 
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