BUZ20 MOSFET. Datasheet pdf. Equivalent
Type Designator: BUZ20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO220M
BUZ20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUZ20 Datasheet (PDF)
buz20.pdf
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BUZ 20SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 20 100 V 13.5 A 0.2 TO-220 AB C67078-S1302-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 13.5Pulsed drain current IDpulsTC = 25 C 54Avalanche current,limited by Tjmax IA
buz20.pdf
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isc N-Channel Mosfet Transistor BUZ20FEATURESStatic Drain-Source On-Resistance: R = 0.2(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay
buz205.pdf
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SIPMOS Power Transistor BUZ 205 N channel Enhancement mode FREDFETType VDS ID RDS (on) Package 1) Ordering CodeBUZ 205 400 V 6.0 A 1.0 TO-220 AB C67078-A1401-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current, TC = 35 C ID 6.0 APulsed drain current, TC = 25 C ID puls 24Drain-source voltage VDS 400 VDrain-gate voltage, RGS = 20 k VDGR 400Ga
buz202.pdf
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isc N-Channel Mosfet Transistor BUZ202FEATURESStatic Drain-Source On-Resistance: R = 0.5(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,rela
buz206.pdf
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isc N-Channel Mosfet Transistor BUZ206FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC converters r .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-S
buz201.pdf
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isc N-Channel Mosfet Transistor BUZ201FEATURESStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)SOA is Power Dissipation LimitedHigh input impedanceHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators,switching converters, motor drivers,rela
buz205.pdf
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isc N-Channel Mosfet Transistor BUZ205FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC converters r .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-S
Datasheet: BUP69 , BUP70 , BUP71 , BUZ10 , BUZ10A , BUZ11 , BUZ11A , BUZ11FI , 10N60 , BUZ21 , BUZ23 , BUZ24 , BUZ25 , BUZ32 , BUZ35 , BUZ36 , BUZ41A .
![BUZ20](https://alltransistors.com/images/us.png)
![BUZ20](https://alltransistors.com/images/es.png)
![BUZ20](https://alltransistors.com/images/ru.png)
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