HAT2240C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HAT2240C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 2.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.098 Ohm

Encapsulados: CMFPAK6

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HAT2240C datasheet

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rej03g1241 hat2240c.pdf pdf_icon

HAT2240C

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:84K  renesas
rej03g1549 hat2244wpds.pdf pdf_icon

HAT2240C

Preliminary Datasheet HAT2244WP REJ03G1549-0410 Silicon N Channel Power MOS FET Rev.4.10 Power Switching May 13, 2010 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 10 m typ. (at VGS = 10 V) Outline RENESAS Package code PWSN0008DA-A (Package name WPAK) 5 6 7 8 D D D D 8 6 7 5 4 1, 2,

 9.1. Size:43K  renesas
hat2265h.pdf pdf_icon

HAT2240C

HAT2265H Silicon N Channel Power MOS FET Power Switching Rev.0.00 Sept.2004 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.5 m typ. (at VGS = 10 V) Lead Free Outline LFPAK 5 4 3 2 5 1 D 4 G 1, 2, 3 Source 4 Gate 5 Drain S S S 1 2 3 Rev.0.00, Sept.20

 9.2. Size:84K  renesas
rej03g1679 hat2201wpds.pdf pdf_icon

HAT2240C

Preliminary Datasheet HAT2201WP REJ03G1679-0310 Silicon N Channel Power MOS FET Rev.3.10 Power Switching May 21, 2010 Features Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 34 m typ. (at VGS = 10 V) Outline RENESAS Package code PWSN0008DA-A (Package name WPAK) 5 6 7 8 D D D D 8 6 7 5 4 1, 2, 3

Otros transistores... HAT2210RJ, HAT2215R, HAT2215RJ, HAT2217C, HAT2218R, HAT2220R, HAT2221C, HAT2226R, IRLB4132, HAT2244WP, HAT2256R, HAT2266H, HAT2267H, HAT2268C, HAT2270H, HAT2275R, HAT2276R