HAT2240C datasheet, аналоги, основные параметры

Наименование производителя: HAT2240C

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.9 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 50 ns

Cossⓘ - Выходная емкость: 60 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.098 Ohm

Тип корпуса: CMFPAK6

Аналог (замена) для HAT2240C

- подборⓘ MOSFET транзистора по параметрам

 

HAT2240C даташит

 ..1. Size:96K  renesas
rej03g1241 hat2240c.pdfpdf_icon

HAT2240C

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:84K  renesas
rej03g1549 hat2244wpds.pdfpdf_icon

HAT2240C

Preliminary Datasheet HAT2244WP REJ03G1549-0410 Silicon N Channel Power MOS FET Rev.4.10 Power Switching May 13, 2010 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 10 m typ. (at VGS = 10 V) Outline RENESAS Package code PWSN0008DA-A (Package name WPAK) 5 6 7 8 D D D D 8 6 7 5 4 1, 2,

 9.1. Size:43K  renesas
hat2265h.pdfpdf_icon

HAT2240C

HAT2265H Silicon N Channel Power MOS FET Power Switching Rev.0.00 Sept.2004 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.5 m typ. (at VGS = 10 V) Lead Free Outline LFPAK 5 4 3 2 5 1 D 4 G 1, 2, 3 Source 4 Gate 5 Drain S S S 1 2 3 Rev.0.00, Sept.20

 9.2. Size:84K  renesas
rej03g1679 hat2201wpds.pdfpdf_icon

HAT2240C

Preliminary Datasheet HAT2201WP REJ03G1679-0310 Silicon N Channel Power MOS FET Rev.3.10 Power Switching May 21, 2010 Features Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 34 m typ. (at VGS = 10 V) Outline RENESAS Package code PWSN0008DA-A (Package name WPAK) 5 6 7 8 D D D D 8 6 7 5 4 1, 2, 3

Другие IGBT... HAT2210RJ, HAT2215R, HAT2215RJ, HAT2217C, HAT2218R, HAT2220R, HAT2221C, HAT2226R, IRLB4132, HAT2244WP, HAT2256R, HAT2266H, HAT2267H, HAT2268C, HAT2270H, HAT2275R, HAT2276R