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BUZ45A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUZ45A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente (Vds): 500 V

Corriente continua de drenaje (Id): 8.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.8 Ohm

Empaquetado / Estuche: TO3

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BUZ45A Datasheet (PDF)

1.1. buz45a.pdf Size:271K _st2

BUZ45A
BUZ45A

5.1. buz45b.pdf Size:42K _update_mosfet

BUZ45A
BUZ45A

BUZ45B Semiconductor Data Sheet October 1998 File Number 2259.1 10A, 500V, 0.500 Ohm, N-Channel Power Features MOSFET • 10A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.500Ω (BUZ45 field effect transistor designed for applications such as • SOA is Power Dissipation Limited B) switching regulators, switching converters, motor drivers,

5.2. buz45.pdf Size:287K _st2

BUZ45A
BUZ45A

 5.3. buz45.pdf Size:204K _inchange_semiconductor

BUZ45A
BUZ45A

INCHANGE Semiconductor isc N-Channel Mosfet Transistor BUZ45 ·FEATURES ·Static Drain-Source On-Resistance : R = 0.6Ω(Max) DS(on) ·SOA is Power Dissipation Limited ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay

Otros transistores... BUZ24 , BUZ25 , BUZ32 , BUZ35 , BUZ36 , BUZ41A , BUZ42 , BUZ45 , IRF830 , BUZ46 , BUZ50A , BUZ50A-220M , BUZ50A-220SM , BUZ50A-220TM , BUZ50ASM , BUZ50A-TO220M , BUZ50B .

 

 
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