BUZ45A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUZ45A  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Id|ⓘ - Corriente continua de drenaje: 8.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm

Encapsulados: TO3

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BUZ45A datasheet

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BUZ45A

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BUZ45A

isc N-Channel Mosfet Transistor BUZ45A FEATURES Static Drain-Source On-Resistance R = 0.8 (Max) DS(on) SOA is Power Dissipation Limited High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers fo

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BUZ45A

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BUZ45A

BUZ45B Semiconductor Data Sheet October 1998 File Number 2259.1 10A, 500V, 0.500 Ohm, N-Channel Power Features MOSFET 10A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.500 (BUZ45 field effect transistor designed for applications such as SOA is Power Dissipation Limited B) switching regulators, switching converters, motor drivers,

MOSTRAR MÁS

Otros transistores... BUZ24, BUZ25, BUZ32, BUZ35, BUZ36, BUZ41A, BUZ42, BUZ45, IRF9540, BUZ46, BUZ50A, BUZ50A-220M, BUZ50A-220SM, BUZ50A-220TM, BUZ50ASM, BUZ50A-TO220M, BUZ50B