isc N-Channel Mosfet Transistor BUZ45AFEATURESStatic Drain-Source On-Resistance: R = 0.8(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay drivers and drivers fo

BUZ45BSemiconductorData Sheet October 1998 File Number 2259.110A, 500V, 0.500 Ohm, N-Channel Power FeaturesMOSFET 10A, 500V[ /TitleThis is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.500(BUZ45field effect transistor designed for applications such as SOA is Power Dissipation LimitedB)switching regulators, switching converters, motor drivers,

isc N-Channel Mosfet Transistor BUZ45BFEATURESStatic Drain-Source On-Resistance: R = 0.5(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay drivers and drivers fo

INCHANGE Semiconductorisc N-Channel Mosfet Transistor BUZ45FEATURESStatic Drain-Source On-Resistance: R = 0.6(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay