HAT2270H Todos los transistores

 

HAT2270H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HAT2270H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 65 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0027 Ohm
   Paquete / Cubierta: LFPAK

 Búsqueda de reemplazo de MOSFET HAT2270H

 

Principales características: HAT2270H

 8.1. Size:105K  renesas
rej03g1464 hat2279hds.pdf pdf_icon

HAT2270H

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:202K  renesas
hat2276r.pdf pdf_icon

HAT2270H

Data Sheet HAT2276R Silicon N Channel Power MOSFET Power Switching R07DS1371EJ0301 Rev.3.01 Jan 20, 2017 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 21 m typ. (at V = 10 V) DS(on) GS Outline RENESAS Package code PRSP0008DD-D (Package name SOP-8) 7 8 5 6 D D D D 5 6 7 8 1, 3 So

 8.3. Size:134K  renesas
rej03g1596 hat2279nds.pdf pdf_icon

HAT2270H

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:127K  renesas
hat2275r.pdf pdf_icon

HAT2270H

HAT2275R Silicon N Channel Power MOS FET Power Switching Rev.4.00 Jul.31.2006 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 25 m typ. (at VGS = 10 V) Outline SOP-8 5 6 7 8 4 3 2 1 7 8 5 6 D D D D 4 2 G G 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain S1 S 3 MOS1 MOS2 Rev.4.00, Jul.3

Otros transistores... HAT2221C , HAT2226R , HAT2240C , HAT2244WP , HAT2256R , HAT2266H , HAT2267H , HAT2268C , SKD502T , HAT2275R , HAT2276R , HAT2279H , HAT2279N , HAT2280R , HAT2281C , HAT2282C , HAT2284H .

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