Справочник MOSFET. HAT2270H

 

HAT2270H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HAT2270H
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 65 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Qgⓘ - Общий заряд затвора: 49 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0027 Ohm
   Тип корпуса: LFPAK

 Аналог (замена) для HAT2270H

 

 

HAT2270H Datasheet (PDF)

 8.1. Size:105K  renesas
rej03g1464 hat2279hds.pdf

HAT2270H
HAT2270H

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:202K  renesas
hat2276r.pdf

HAT2270H
HAT2270H

Data Sheet HAT2276R Silicon N Channel Power MOSFET Power Switching R07DS1371EJ0301Rev.3.01Jan 20, 2017Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 21 m typ. (at V = 10 V) DS(on) GSOutline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)7 8 5 6D D D D56781, 3 So

 8.3. Size:134K  renesas
rej03g1596 hat2279nds.pdf

HAT2270H
HAT2270H

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:127K  renesas
hat2275r.pdf

HAT2270H
HAT2270H

HAT2275R Silicon N Channel Power MOS FET Power Switching Rev.4.00 Jul.31.2006 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 25 m typ. (at VGS = 10 V) Outline SOP-8567843217 8 5 6D DD D42GG1, 3 Source2, 4 Gate5, 6, 7, 8 DrainS1 S 3MOS1 MOS2Rev.4.00, Jul.3

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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