HAT2279N Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HAT2279N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14.5 nS

Cossⓘ - Capacitancia de salida: 410 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0123 Ohm

Encapsulados: LFPAKI

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HAT2279N datasheet

 0.1. Size:134K  renesas
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HAT2279N

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.1. Size:105K  renesas
rej03g1464 hat2279hds.pdf pdf_icon

HAT2279N

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:202K  renesas
hat2276r.pdf pdf_icon

HAT2279N

Data Sheet HAT2276R Silicon N Channel Power MOSFET Power Switching R07DS1371EJ0301 Rev.3.01 Jan 20, 2017 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 21 m typ. (at V = 10 V) DS(on) GS Outline RENESAS Package code PRSP0008DD-D (Package name SOP-8) 7 8 5 6 D D D D 5 6 7 8 1, 3 So

 8.2. Size:127K  renesas
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HAT2279N

HAT2275R Silicon N Channel Power MOS FET Power Switching Rev.4.00 Jul.31.2006 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 25 m typ. (at VGS = 10 V) Outline SOP-8 5 6 7 8 4 3 2 1 7 8 5 6 D D D D 4 2 G G 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain S1 S 3 MOS1 MOS2 Rev.4.00, Jul.3

Otros transistores... HAT2256R, HAT2266H, HAT2267H, HAT2268C, HAT2270H, HAT2275R, HAT2276R, HAT2279H, 12N60, HAT2280R, HAT2281C, HAT2282C, HAT2284H, HAT2286C, HAT2287WP, HAT2291C, HAT2292C