HAT2279N datasheet, аналоги, основные параметры
Наименование производителя: HAT2279N
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 25 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 14.5 ns
Cossⓘ - Выходная емкость: 410 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0123 Ohm
Тип корпуса: LFPAKI
Аналог (замена) для HAT2279N
- подборⓘ MOSFET транзистора по параметрам
HAT2279N даташит
rej03g1596 hat2279nds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1464 hat2279hds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
hat2276r.pdf
Data Sheet HAT2276R Silicon N Channel Power MOSFET Power Switching R07DS1371EJ0301 Rev.3.01 Jan 20, 2017 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 21 m typ. (at V = 10 V) DS(on) GS Outline RENESAS Package code PRSP0008DD-D (Package name SOP-8) 7 8 5 6 D D D D 5 6 7 8 1, 3 So
hat2275r.pdf
HAT2275R Silicon N Channel Power MOS FET Power Switching Rev.4.00 Jul.31.2006 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 25 m typ. (at VGS = 10 V) Outline SOP-8 5 6 7 8 4 3 2 1 7 8 5 6 D D D D 4 2 G G 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain S1 S 3 MOS1 MOS2 Rev.4.00, Jul.3
Другие IGBT... HAT2256R, HAT2266H, HAT2267H, HAT2268C, HAT2270H, HAT2275R, HAT2276R, HAT2279H, 12N60, HAT2280R, HAT2281C, HAT2282C, HAT2284H, HAT2286C, HAT2287WP, HAT2291C, HAT2292C
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Список транзисторов
Обновления
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