HAT2287WP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HAT2287WP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 37 nS
Cossⓘ - Capacitancia de salida: 220 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.094 Ohm
Paquete / Cubierta: WPAK
- Selección de transistores por parámetros
HAT2287WP Datasheet (PDF)
rej03g1470 hat2287wpds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1328 hat2281cds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1329 hat2282cds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
hat2280r.pdf

Data Sheet HAT2280R Silicon N Channel Power MOSFET Power Switching R07DS1372EJ0201Rev.2.01Jan 20, 2017Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 27 m typ. (at V = 10 V) DS(on) GSOutline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)7 8 5 6D D D D56781, 3 So
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: STL100N10F7 | SSF11NS70UF | 3SK88L | SI4368DY | STN2NE10 | SWJ4N80D | SWK15N04V
History: STL100N10F7 | SSF11NS70UF | 3SK88L | SI4368DY | STN2NE10 | SWJ4N80D | SWK15N04V



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