HAT2287WP datasheet, аналоги, основные параметры

Наименование производителя: HAT2287WP

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 30 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 17 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 37 ns

Cossⓘ - Выходная емкость: 220 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.094 Ohm

Тип корпуса: WPAK

Аналог (замена) для HAT2287WP

- подборⓘ MOSFET транзистора по параметрам

 

HAT2287WP даташит

 0.1. Size:70K  renesas
 rej03g1470 hat2287wpds.pdf pdf_icon

HAT2287WP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:96K  renesas
 rej03g1328 hat2281cds.pdf pdf_icon

HAT2287WP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:96K  renesas
 rej03g1329 hat2282cds.pdf pdf_icon

HAT2287WP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:98K  renesas
 hat2280r.pdf pdf_icon

HAT2287WP

Data Sheet HAT2280R Silicon N Channel Power MOSFET Power Switching R07DS1372EJ0201 Rev.2.01 Jan 20, 2017 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 27 m typ. (at V = 10 V) DS(on) GS Outline RENESAS Package code PRSP0008DD-D (Package name SOP-8) 7 8 5 6 D D D D 5 6 7 8 1, 3 So

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