RJK0202DSP Todos los transistores

 

RJK0202DSP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJK0202DSP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0062 Ohm
   Paquete / Cubierta: SOP8
 

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RJK0202DSP Datasheet (PDF)

 ..1. Size:85K  renesas
r07ds0238ej rjk0202dsp.pdf pdf_icon

RJK0202DSP

Preliminary Datasheet RJK0202DSP R07DS0238EJ0220Silicon N Channel Power MOS FET Rev.2.20Power Switching Jan 05, 2011Features High speed switching Capable of 2.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.0 m typ. (at VGS = 4.5 V) Outline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8

 8.1. Size:79K  renesas
rej03g1923 rjk0206dpads.pdf pdf_icon

RJK0202DSP

Preliminary Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200Power Switching Rev.2.00Apr 27, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

 8.2. Size:79K  renesas
rej03g1922 rjk0204dpads.pdf pdf_icon

RJK0202DSP

Preliminary Datasheet RJK0204DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1922-0210Power Switching Rev.2.10Apr 27, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

 8.3. Size:79K  renesas
rej03g1924 rjk0208dpads.pdf pdf_icon

RJK0202DSP

Preliminary Datasheet RJK0208DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1924-0200Power Switching Rev.2.00Apr 27, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.6 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

Otros transistores... HITK0303MP , HS54095 , HS54095TZ-E , HS56021 , RJJ0101DPD , RJJ0315DPA , RJJ0621DPP , RJJ1011DPD , MMD60R360PRH , RJK0204DPA , RJK0206DPA , RJK0208DPA , RJK0210DPA , RJK0211DPA , RJK0212DPA , RJK0213DPA , RJK0214DPA .

History: RJK0396DPA | IPB011N04LG

 

 
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