Справочник MOSFET. RJK0202DSP

 

RJK0202DSP Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: RJK0202DSP
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0062 Ohm
   Тип корпуса: SOP8
 

 Аналог (замена) для RJK0202DSP

   - подбор ⓘ MOSFET транзистора по параметрам

 

RJK0202DSP Datasheet (PDF)

 ..1. Size:85K  renesas
r07ds0238ej rjk0202dsp.pdfpdf_icon

RJK0202DSP

Preliminary Datasheet RJK0202DSP R07DS0238EJ0220Silicon N Channel Power MOS FET Rev.2.20Power Switching Jan 05, 2011Features High speed switching Capable of 2.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.0 m typ. (at VGS = 4.5 V) Outline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8

 8.1. Size:79K  renesas
rej03g1923 rjk0206dpads.pdfpdf_icon

RJK0202DSP

Preliminary Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200Power Switching Rev.2.00Apr 27, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

 8.2. Size:79K  renesas
rej03g1922 rjk0204dpads.pdfpdf_icon

RJK0202DSP

Preliminary Datasheet RJK0204DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1922-0210Power Switching Rev.2.10Apr 27, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

 8.3. Size:79K  renesas
rej03g1924 rjk0208dpads.pdfpdf_icon

RJK0202DSP

Preliminary Datasheet RJK0208DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1924-0200Power Switching Rev.2.00Apr 27, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.6 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

Другие MOSFET... HITK0303MP , HS54095 , HS54095TZ-E , HS56021 , RJJ0101DPD , RJJ0315DPA , RJJ0621DPP , RJJ1011DPD , MMD60R360PRH , RJK0204DPA , RJK0206DPA , RJK0208DPA , RJK0210DPA , RJK0211DPA , RJK0212DPA , RJK0213DPA , RJK0214DPA .

History: SI9945DY | WML80R720S | WMM037N10HGS

 

 
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