RJK0202DSP datasheet, аналоги, основные параметры

Наименование производителя: RJK0202DSP

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0062 Ohm

Тип корпуса: SOP8

Аналог (замена) для RJK0202DSP

- подборⓘ MOSFET транзистора по параметрам

 

RJK0202DSP даташит

 ..1. Size:85K  renesas
 r07ds0238ej rjk0202dsp.pdf pdf_icon

RJK0202DSP

Preliminary Datasheet RJK0202DSP R07DS0238EJ0220 Silicon N Channel Power MOS FET Rev.2.20 Power Switching Jan 05, 2011 Features High speed switching Capable of 2.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.0 m typ. (at VGS = 4.5 V) Outline RENESAS Package code PRSP0008DD-D (Package name SOP-8

 8.1. Size:79K  renesas
 rej03g1923 rjk0206dpads.pdf pdf_icon

RJK0202DSP

Preliminary Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200 Power Switching Rev.2.00 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

 8.2. Size:79K  renesas
 rej03g1922 rjk0204dpads.pdf pdf_icon

RJK0202DSP

Preliminary Datasheet RJK0204DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1922-0210 Power Switching Rev.2.10 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

 8.3. Size:79K  renesas
 rej03g1924 rjk0208dpads.pdf pdf_icon

RJK0202DSP

Preliminary Datasheet RJK0208DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1924-0200 Power Switching Rev.2.00 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.6 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... HITK0303MP, HS54095, HS54095TZ-E, HS56021, RJJ0101DPD, RJJ0315DPA, RJJ0621DPP, RJJ1011DPD, RU7088R, RJK0204DPA, RJK0206DPA, RJK0208DPA, RJK0210DPA, RJK0211DPA, RJK0212DPA, RJK0213DPA, RJK0214DPA