RJK0210DPA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJK0210DPA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.5 nS
Cossⓘ - Capacitancia de salida: 750 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0054 Ohm
Paquete / Cubierta: WPAK
Búsqueda de reemplazo de RJK0210DPA MOSFET
RJK0210DPA Datasheet (PDF)
r07ds0217ej rjk0210dpa.pdf

Preliminary Datasheet RJK0210DPA R07DS0217EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Dec 07, 2010Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN00
r07ds0219ej rjk0212dpa.pdf

Preliminary Datasheet RJK0212DPA R07DS0219EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Dec 07, 2010Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008
r07ds0207ej rjk0215dpa.pdf

Preliminary Datasheet RJK0215DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0207EJ0110High Speed Power Switching Rev.1.10Sep 05, 2011Applications DC-DC conversion for PC and Server. Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A
rej03g1942 rjk0213dpads.pdf

Preliminary Datasheet RJK0213DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1942-0100Power Switching Rev.1.00Jun 15, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.85 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENE
Otros transistores... RJJ0101DPD , RJJ0315DPA , RJJ0621DPP , RJJ1011DPD , RJK0202DSP , RJK0204DPA , RJK0206DPA , RJK0208DPA , AO4468 , RJK0211DPA , RJK0212DPA , RJK0213DPA , RJK0214DPA , RJK0215DPA , RJK0216DPA , RJK0222DNS , RJK0223DNS .
History: SQD100N03-3M2L
History: SQD100N03-3M2L



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