RJK0210DPA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK0210DPA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 45 W

Tensión drenaje-fuente (Vds): 25 V

Tensión compuerta-fuente (Vgs): 16 V

Corriente continua de drenaje (Id): 40 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 3.5 nS

Conductancia de drenaje-sustrato (Cd): 750 pF

Resistencia drenaje-fuente RDS(on): 0.0054 Ohm

Empaquetado / Estuche: WPAK

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RJK0210DPA Datasheet (PDF)

1.1. r07ds0217ej rjk0210dpa.pdf Size:127K _renesas

Preliminary Datasheet RJK0210DPA R07DS0217EJ0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Dec 07, 2010 Features ? Very high speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 4.5 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-B (Package na

4.1. r07ds0207ej rjk0215dpa.pdf Size:254K _renesas

Preliminary Datasheet RJK0215DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0207EJ0110 High Speed Power Switching Rev.1.10 Sep 05, 2011 Applications DC-DC conversion for PC and Server. Features ? Low on-resistance ? Capable of 4.5 V gate drive ? High density mounting ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DD-A (Package na

4.2. r07ds0218ej rjk0211dpa.pdf Size:145K _renesas

Preliminary Datasheet RJK0211DPA R07DS0218EJ0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Dec 07, 2010 Features ? Very high speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 6.8 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-B (Package na

4.3. r07ds0219ej rjk0212dpa.pdf Size:126K _renesas

Preliminary Datasheet RJK0212DPA R07DS0219EJ0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Dec 07, 2010 Features ? Very high speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 9 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-B (Package name

4.4. r07ds0206ej rjk0214dpa.pdf Size:254K _renesas

Preliminary Datasheet RJK0214DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0206EJ0110 High Speed Power Switching Rev.1.10 Sep 02, 2011 Applications DC-DC conversion for PC and Server. Features ? Low on-resistance ? Capable of 4.5 V gate drive ? High density mounting ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DD-A (Package na

4.5. r07ds0208ej rjk0216dpa.pdf Size:254K _renesas

Preliminary Datasheet RJK0216DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0208EJ0110 High Speed Power Switching Rev.1.10 Sep 05, 2011 Applications DC-DC conversion for PC and Server. Features ? Low on-resistance ? Capable of 4.5 V gate drive ? High density mounting ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DD-A (Package na

4.6. rej03g1942 rjk0213dpads.pdf Size:152K _renesas

Preliminary Datasheet RJK0213DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1942-0100 Power Switching Rev.1.00 Jun 15, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 1.85 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: P

Otros transistores... RJJ0101DPD , RJJ0315DPA , RJJ0621DPP , RJJ1011DPD , RJK0202DSP , RJK0204DPA , RJK0206DPA , RJK0208DPA , IRFP4229 , RJK0211DPA , RJK0212DPA , RJK0213DPA , RJK0214DPA , RJK0215DPA , RJK0216DPA , RJK0222DNS , RJK0223DNS .

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