RJK0210DPA MOSFET. Datasheet pdf. Equivalent
Type Designator: RJK0210DPA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11.8 nC
trⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 750 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
Package: WPAK
RJK0210DPA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RJK0210DPA Datasheet (PDF)
r07ds0217ej rjk0210dpa.pdf
Preliminary Datasheet RJK0210DPA R07DS0217EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Dec 07, 2010Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN00
r07ds0219ej rjk0212dpa.pdf
Preliminary Datasheet RJK0212DPA R07DS0219EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Dec 07, 2010Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008
r07ds0207ej rjk0215dpa.pdf
Preliminary Datasheet RJK0215DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0207EJ0110High Speed Power Switching Rev.1.10Sep 05, 2011Applications DC-DC conversion for PC and Server. Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A
rej03g1942 rjk0213dpads.pdf
Preliminary Datasheet RJK0213DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1942-0100Power Switching Rev.1.00Jun 15, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.85 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENE
r07ds0206ej rjk0214dpa.pdf
Preliminary Datasheet RJK0214DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0206EJ0110High Speed Power Switching Rev.1.10Sep 02, 2011Applications DC-DC conversion for PC and Server. Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A
r07ds0218ej rjk0211dpa.pdf
Preliminary Datasheet RJK0211DPA R07DS0218EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Dec 07, 2010Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN00
r07ds0208ej rjk0216dpa.pdf
Preliminary Datasheet RJK0216DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0208EJ0110High Speed Power Switching Rev.1.10Sep 05, 2011Applications DC-DC conversion for PC and Server. Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: WST03P06 | TPCF8301
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