RJK0230DPA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJK0230DPA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 15 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0058 Ohm
Encapsulados: WPAK
Búsqueda de reemplazo de RJK0230DPA MOSFET
- Selecciónⓘ de transistores por parámetros
RJK0230DPA datasheet
..1. Size:215K renesas
r07ds0541ej rjk0230dpa.pdf 
Preliminary Datasheet RJK0230DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0541EJ0110 High Speed Power Switching Rev.1.10 Sep 12, 2011 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code PWSN0008DD-B (Package name WPAK-D(3)) 2 3 4 9 D1 D1 D1 S1/D2
8.1. Size:288K 1
rjk0234dns.pdf
Preliminary Datasheet RJK0234DNS 25V, 35A, 5.8m max. R07DS1073EJ0130 N Channel Power MOS FET Rev.1.30 High Speed Power Switching May 23, 2013 Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code PVSN0008JD-A (Packag
9.1. Size:143K renesas
r07ds0259ej rjk0225dns.pdf
Preliminary Datasheet RJK0225DNS R07DS0259EJ0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching Mar 03, 2011 Features Very High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline Package name 8pin HVSON(3333)
9.2. Size:126K renesas
r07ds0219ej rjk0212dpa.pdf
Preliminary Datasheet RJK0212DPA R07DS0219EJ0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Dec 07, 2010 Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008
9.3. Size:254K renesas
r07ds0207ej rjk0215dpa.pdf
Preliminary Datasheet RJK0215DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0207EJ0110 High Speed Power Switching Rev.1.10 Sep 05, 2011 Applications DC-DC conversion for PC and Server. Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code PWSN0008DD-A
9.4. Size:127K renesas
r07ds0217ej rjk0210dpa.pdf
Preliminary Datasheet RJK0210DPA R07DS0217EJ0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Dec 07, 2010 Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN00
9.5. Size:75K renesas
r07ds0126ej rjk0223dns.pdf
Preliminary Datasheet RJK0223DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0126EJ0030 (Previous REJ03G1952-0020) Rev.0.30 Sep 02, 2010 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code PWSN0008JD-A (Package name HWSON304
9.6. Size:152K renesas
rej03g1942 rjk0213dpads.pdf
Preliminary Datasheet RJK0213DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1942-0100 Power Switching Rev.1.00 Jun 15, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.85 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENE
9.7. Size:79K renesas
rej03g1923 rjk0206dpads.pdf
Preliminary Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200 Power Switching Rev.2.00 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES
9.8. Size:85K renesas
r07ds0238ej rjk0202dsp.pdf
Preliminary Datasheet RJK0202DSP R07DS0238EJ0220 Silicon N Channel Power MOS FET Rev.2.20 Power Switching Jan 05, 2011 Features High speed switching Capable of 2.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.0 m typ. (at VGS = 4.5 V) Outline RENESAS Package code PRSP0008DD-D (Package name SOP-8
9.9. Size:254K renesas
r07ds0206ej rjk0214dpa.pdf
Preliminary Datasheet RJK0214DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0206EJ0110 High Speed Power Switching Rev.1.10 Sep 02, 2011 Applications DC-DC conversion for PC and Server. Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code PWSN0008DD-A
9.10. Size:145K renesas
r07ds0218ej rjk0211dpa.pdf
Preliminary Datasheet RJK0211DPA R07DS0218EJ0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Dec 07, 2010 Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN00
9.11. Size:63K renesas
r07ds0125ej rjk0222dns.pdf
Preliminary Datasheet RJK0222DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0125EJ0030 (Previous REJ03G1951-0020) Rev.0.30 Sep 06, 2010 Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code PWSN0008JD-A (Package name HWSON304
9.12. Size:79K renesas
rej03g1922 rjk0204dpads.pdf
Preliminary Datasheet RJK0204DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1922-0210 Power Switching Rev.2.10 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES
9.13. Size:79K renesas
rej03g1924 rjk0208dpads.pdf
Preliminary Datasheet RJK0208DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1924-0200 Power Switching Rev.2.00 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.6 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES
9.14. Size:254K renesas
r07ds0208ej rjk0216dpa.pdf
Preliminary Datasheet RJK0216DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0208EJ0110 High Speed Power Switching Rev.1.10 Sep 05, 2011 Applications DC-DC conversion for PC and Server. Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code PWSN0008DD-A
9.15. Size:165K renesas
r07ds0260ej rjk0226dns.pdf
Preliminary Datasheet RJK0226DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS0260EJ0110 Rev.1.10 Mar 03, 2011 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.3 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline Packag
Otros transistores... RJK0213DPA, RJK0214DPA, RJK0215DPA, RJK0216DPA, RJK0222DNS, RJK0223DNS, RJK0225DNS, RJK0226DNS, 50N06, RJK0301DPB, RJK0301DPC, RJK0302DPB, RJK0302DPC, RJK0303DPB, RJK0303DPC, RJK0304DPB, RJK0304DPC
