RJK0230DPA MOSFET. Datasheet pdf. Equivalent

   Type Designator: RJK0230DPA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.7 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: WPAK

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RJK0230DPA Datasheet (PDF)

..1. Size:215K renesas
r07ds0541ej rjk0230dpa.pdf pdf_icon

Preliminary Datasheet RJK0230DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0541EJ0110High Speed Power Switching Rev.1.10Sep 12, 2011Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-B(Package name: WPAK-D(3))2 3 4 9D1 D1 D1S1/D2

8.1. Size:288K 1
rjk0234dns.pdf pdf_icon

Preliminary Datasheet RJK0234DNS 25V, 35A, 5.8mmax. R07DS1073EJ0130N Channel Power MOS FET Rev.1.30High Speed Power Switching May 23, 2013Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PVSN0008JD-A(Packag

9.1. Size:143K renesas
r07ds0259ej rjk0225dns.pdf pdf_icon

Preliminary Datasheet RJK0225DNS R07DS0259EJ0110Silicon N Channel Power MOS FET Rev.1.10Power Switching Mar 03, 2011Features Very High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline Package name: 8pin HVSON(3333)

9.2. Size:126K renesas
r07ds0219ej rjk0212dpa.pdf pdf_icon

Preliminary Datasheet RJK0212DPA R07DS0219EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Dec 07, 2010Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008

9.3. Size:254K renesas
r07ds0207ej rjk0215dpa.pdf pdf_icon

Preliminary Datasheet RJK0215DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0207EJ0110High Speed Power Switching Rev.1.10Sep 05, 2011Applications DC-DC conversion for PC and Server. Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A

9.4. Size:127K renesas
r07ds0217ej rjk0210dpa.pdf pdf_icon

Preliminary Datasheet RJK0210DPA R07DS0217EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Dec 07, 2010Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN00

9.5. Size:75K renesas
r07ds0126ej rjk0223dns.pdf pdf_icon

Preliminary Datasheet RJK0223DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0126EJ0030(Previous: REJ03G1952-0020)Rev.0.30Sep 02, 2010Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JD-A(Package name: HWSON304

9.6. Size:152K renesas
rej03g1942 rjk0213dpads.pdf pdf_icon

Preliminary Datasheet RJK0213DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1942-0100Power Switching Rev.1.00Jun 15, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.85 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENE

9.7. Size:79K renesas
rej03g1923 rjk0206dpads.pdf pdf_icon

Preliminary Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200Power Switching Rev.2.00Apr 27, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

9.8. Size:85K renesas
r07ds0238ej rjk0202dsp.pdf pdf_icon

Preliminary Datasheet RJK0202DSP R07DS0238EJ0220Silicon N Channel Power MOS FET Rev.2.20Power Switching Jan 05, 2011Features High speed switching Capable of 2.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.0 m typ. (at VGS = 4.5 V) Outline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8

9.9. Size:254K renesas
r07ds0206ej rjk0214dpa.pdf pdf_icon

Preliminary Datasheet RJK0214DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0206EJ0110High Speed Power Switching Rev.1.10Sep 02, 2011Applications DC-DC conversion for PC and Server. Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A

9.10. Size:145K renesas
r07ds0218ej rjk0211dpa.pdf pdf_icon

Preliminary Datasheet RJK0211DPA R07DS0218EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Dec 07, 2010Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN00

9.11. Size:63K renesas
r07ds0125ej rjk0222dns.pdf pdf_icon

Preliminary Datasheet RJK0222DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0125EJ0030(Previous: REJ03G1951-0020)Rev.0.30Sep 06, 2010Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JD-A(Package name: HWSON304

9.12. Size:79K renesas
rej03g1922 rjk0204dpads.pdf pdf_icon

Preliminary Datasheet RJK0204DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1922-0210Power Switching Rev.2.10Apr 27, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

9.13. Size:79K renesas
rej03g1924 rjk0208dpads.pdf pdf_icon

Preliminary Datasheet RJK0208DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1924-0200Power Switching Rev.2.00Apr 27, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.6 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

9.14. Size:254K renesas
r07ds0208ej rjk0216dpa.pdf pdf_icon

Preliminary Datasheet RJK0216DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0208EJ0110High Speed Power Switching Rev.1.10Sep 05, 2011Applications DC-DC conversion for PC and Server. Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A

9.15. Size:165K renesas
r07ds0260ej rjk0226dns.pdf pdf_icon

Preliminary Datasheet RJK0226DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS0260EJ0110Rev.1.10Mar 03, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.3 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline Packag

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RJK0230DPA MOSFET. Datasheet pdf. Equivalent

RJK0230DPA Datasheet (PDF)

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