RJK0355DSP Todos los transistores

 

RJK0355DSP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJK0355DSP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.5 nS
   Cossⓘ - Capacitancia de salida: 165 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0111 Ohm
   Paquete / Cubierta: SOP8

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RJK0355DSP Datasheet (PDF)

 0.1. Size:126K  renesas
rej03g1650 rjk0355dspds.pdf

RJK0355DSP
RJK0355DSP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 6.1. Size:94K  renesas
rej03g1649 rjk0355dpads.pdf

RJK0355DSP
RJK0355DSP

Preliminary Datasheet RJK0355DPA REJ03G1649-0510Silicon N Channel Power MOS FET Rev.5.10Power Switching May 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.2 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PWSN0008DC-A(Package name: W

 8.1. Size:127K  renesas
rej03g1721 rjk0351dspds.pdf

RJK0355DSP
RJK0355DSP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:88K  renesas
rej03g1661 rjk0354dspds.pdf

RJK0355DSP
RJK0355DSP

Preliminary Datasheet RJK0354DSP REJ03G1661-0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 05, 2010Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.4 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)5 6 7 8D

 8.3. Size:94K  renesas
rej03g1646 rjk0351dpads.pdf

RJK0355DSP
RJK0355DSP

Preliminary Datasheet RJK0351DPA REJ03G1646-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.2 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PWSN0008DC-A(Package name: W

 8.4. Size:125K  renesas
rej03g1652 rjk0358dspds.pdf

RJK0355DSP
RJK0355DSP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:125K  renesas
rej03g1648 rjk0353dspds.pdf

RJK0355DSP
RJK0355DSP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:94K  renesas
rej03g1651 rjk0358dpads.pdf

RJK0355DSP
RJK0355DSP

Preliminary Datasheet RJK0358DPA REJ03G1651-0410Silicon N Channel Power MOS FET Rev.4.10Power Switching May 21, 2010Features High speed switching Capable of 5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.6 m typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DC-A(Package name: WPAK(2))5 6 7 8

 8.7. Size:96K  renesas
rej03g1660 rjk0352dspds.pdf

RJK0355DSP
RJK0355DSP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.8. Size:94K  renesas
rej03g1647 rjk0353dpads.pdf

RJK0355DSP
RJK0355DSP

Preliminary Datasheet RJK0353DPA REJ03G1647-0310Silicon N Channel Power MOS FET Rev.3.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.0 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PWSN0008DC-A(Package name: W

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