RJK0355DSP MOSFET. Datasheet pdf. Equivalent
Type Designator: RJK0355DSP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 165 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0111 Ohm
Package: SOP8
RJK0355DSP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RJK0355DSP Datasheet (PDF)
rej03g1650 rjk0355dspds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1649 rjk0355dpads.pdf
Preliminary Datasheet RJK0355DPA REJ03G1649-0510Silicon N Channel Power MOS FET Rev.5.10Power Switching May 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.2 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PWSN0008DC-A(Package name: W
rej03g1721 rjk0351dspds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1661 rjk0354dspds.pdf
Preliminary Datasheet RJK0354DSP REJ03G1661-0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 05, 2010Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.4 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)5 6 7 8D
rej03g1646 rjk0351dpads.pdf
Preliminary Datasheet RJK0351DPA REJ03G1646-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.2 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PWSN0008DC-A(Package name: W
rej03g1652 rjk0358dspds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1648 rjk0353dspds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1651 rjk0358dpads.pdf
Preliminary Datasheet RJK0358DPA REJ03G1651-0410Silicon N Channel Power MOS FET Rev.4.10Power Switching May 21, 2010Features High speed switching Capable of 5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.6 m typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DC-A(Package name: WPAK(2))5 6 7 8
rej03g1660 rjk0352dspds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1647 rjk0353dpads.pdf
Preliminary Datasheet RJK0353DPA REJ03G1647-0310Silicon N Channel Power MOS FET Rev.3.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.0 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PWSN0008DC-A(Package name: W
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