All MOSFET. RJK0355DSP Datasheet

 

RJK0355DSP Datasheet and Replacement


   Type Designator: RJK0355DSP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0111 Ohm
   Package: SOP8
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RJK0355DSP Datasheet (PDF)

 0.1. Size:126K  renesas
rej03g1650 rjk0355dspds.pdf pdf_icon

RJK0355DSP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 6.1. Size:94K  renesas
rej03g1649 rjk0355dpads.pdf pdf_icon

RJK0355DSP

Preliminary Datasheet RJK0355DPA REJ03G1649-0510Silicon N Channel Power MOS FET Rev.5.10Power Switching May 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.2 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PWSN0008DC-A(Package name: W

 8.1. Size:127K  renesas
rej03g1721 rjk0351dspds.pdf pdf_icon

RJK0355DSP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:88K  renesas
rej03g1661 rjk0354dspds.pdf pdf_icon

RJK0355DSP

Preliminary Datasheet RJK0354DSP REJ03G1661-0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 05, 2010Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.4 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)5 6 7 8D

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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