RJK0364DPA Todos los transistores

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RJK0364DPA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK0364DPA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 35 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 35 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 4.5 nS

Conductancia de drenaje-sustrato (Cd): 300 pF

Resistencia drenaje-fuente RDS(on): 0.0071 Ohm

Empaquetado / Estuche: WPAK

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RJK0364DPA Datasheet (PDF)

1.1. rej03g1937 rjk0364dpa02ds.pdf Size:125K _renesas

RJK0364DPA
RJK0364DPA

Preliminary Datasheet RJK0364DPA-02 REJ03G1937-0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching May 21, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 5.3 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name

4.1. rej03g1658 rjk0368dpads.pdf Size:94K _renesas

RJK0364DPA
RJK0364DPA

Preliminary Datasheet RJK0368DPA REJ03G1658-0410 Silicon N Channel Power MOS FET Rev.4.10 Power Switching May 21, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 11 m? typ. (at VGS = 10 V) ? Pb-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8

4.2. rej03g1939 rjk0366dpa02ds.pdf Size:125K _renesas

RJK0364DPA
RJK0364DPA

Preliminary Datasheet RJK0366DPA-02 REJ03G1939-0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching May 21, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 7.4 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name

4.3. rej03g1653 rjk0362dspds.pdf Size:125K _renesas

RJK0364DPA
RJK0364DPA

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.4. rej03g1938 rjk0365dpa02ds.pdf Size:125K _renesas

RJK0364DPA
RJK0364DPA

Preliminary Datasheet RJK0365DPA-02 REJ03G1938-0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching May 21, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 6.3 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name

Otros transistores... RJK0351DPA , RJK0351DSP , RJK0352DSP , RJK0353DPA , RJK0353DSP , RJK0354DSP , RJK0355DPA , RJK0355DSP , IRFP4332 , RJK0365DPA , RJK0366DPA , RJK0368DPA , RJK0379DPA , RJK0380DPA , RJK0381DPA , RJK0389DPA , RJK0390DPA .

 


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