RJK0364DPA Datasheet. Specs and Replacement

Type Designator: RJK0364DPA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.5 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0071 Ohm

Package: WPAK

RJK0364DPA substitution

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RJK0364DPA datasheet

 0.1. Size:125K  renesas
rej03g1937 rjk0364dpa02ds.pdf pdf_icon

RJK0364DPA

Preliminary Datasheet RJK0364DPA-02 REJ03G1937-0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching May 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008... See More ⇒

 8.1. Size:86K  renesas
rjk0369dsp.pdf pdf_icon

RJK0364DPA

RJK0369DSP Silicon N Channel Power MOS FET Power Switching REJ03G1662-0201 Rev.2.01 Apr 24, 2008 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 12.0 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code PRSP0008DD-D (Package name SOP-8) 5 6 7 8 D D D D 5 6 7 8 1,... See More ⇒

 8.2. Size:125K  renesas
rej03g1938 rjk0365dpa02ds.pdf pdf_icon

RJK0364DPA

Preliminary Datasheet RJK0365DPA-02 REJ03G1938-0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching May 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008... See More ⇒

 8.3. Size:125K  renesas
rej03g1939 rjk0366dpa02ds.pdf pdf_icon

RJK0364DPA

Preliminary Datasheet RJK0366DPA-02 REJ03G1939-0110 Silicon N Channel Power MOS FET Rev.1.10 Power Switching May 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.4 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008... See More ⇒

Detailed specifications: RJK0351DPA, RJK0351DSP, RJK0352DSP, RJK0353DPA, RJK0353DSP, RJK0354DSP, RJK0355DPA, RJK0355DSP, 4435, RJK0365DPA, RJK0366DPA, RJK0368DPA, RJK0379DPA, RJK0380DPA, RJK0381DPA, RJK0389DPA, RJK0390DPA

Keywords - RJK0364DPA MOSFET specs

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