RJK0365DPA Todos los transistores

 

RJK0365DPA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJK0365DPA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0084 Ohm
   Paquete / Cubierta: WPAK
 

 Búsqueda de reemplazo de RJK0365DPA MOSFET

   - Selección ⓘ de transistores por parámetros

 

RJK0365DPA Datasheet (PDF)

 ..1. Size:1174K  cn vbsemi
rjk0365dpa.pdf pdf_icon

RJK0365DPA

RJK0365DPAwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 6030 31 nC0.009 at VGS = 4.5 V 48APPLICATIONS OR-ingDFN5X6 Single DD ServerD 8 DC/DCD 7D 65G12 SS3 S

 0.1. Size:125K  renesas
rej03g1938 rjk0365dpa02ds.pdf pdf_icon

RJK0365DPA

Preliminary Datasheet RJK0365DPA-02 REJ03G1938-0110Silicon N Channel Power MOS FET Rev.1.10Power Switching May 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008

 8.1. Size:125K  renesas
rej03g1937 rjk0364dpa02ds.pdf pdf_icon

RJK0365DPA

Preliminary Datasheet RJK0364DPA-02 REJ03G1937-0110Silicon N Channel Power MOS FET Rev.1.10Power Switching May 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008

 8.2. Size:86K  renesas
rjk0369dsp.pdf pdf_icon

RJK0365DPA

RJK0369DSP Silicon N Channel Power MOS FET Power Switching REJ03G1662-0201 Rev.2.01 Apr 24, 2008 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 12.0 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)5 6 7 8D D D D56781,

Otros transistores... RJK0351DSP , RJK0352DSP , RJK0353DPA , RJK0353DSP , RJK0354DSP , RJK0355DPA , RJK0355DSP , RJK0364DPA , AON7410 , RJK0366DPA , RJK0368DPA , RJK0379DPA , RJK0380DPA , RJK0381DPA , RJK0389DPA , RJK0390DPA , RJK0391DPA .

History: IXFV26N60P | DAMH160N200 | CS4N65A3HD | MSK7804 | HY150N075T | FTK2312 | NT4N03

 

 
Back to Top

 


 
.