RJK0396DPA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK0396DPA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 28 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.4 nS

Cossⓘ - Capacitancia de salida: 185 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: WPAK

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RJK0396DPA datasheet

 0.1. Size:92K  renesas
 rej03g1787 rjk0396dpads.pdf pdf_icon

RJK0396DPA

Preliminary Datasheet RJK0396DPA REJ03G1787-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-

 8.1. Size:118K  renesas
 rej03g1823 rjk0390dpads.pdf pdf_icon

RJK0396DPA

Preliminary Datasheet RJK0390DPA REJ03G1823-0130 Silicon N Channel Power MOS FET Rev.1.30 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.7 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-

 8.2. Size:92K  renesas
 rej03g1786 rjk0395dpads.pdf pdf_icon

RJK0396DPA

Preliminary Datasheet RJK0395DPA REJ03G1786-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-

 8.3. Size:95K  renesas
 rej03g1824 rjk0391dpads.pdf pdf_icon

RJK0396DPA

Preliminary Datasheet RJK0391DPA REJ03G1824-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 12, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-

MOSTRAR MÁS

Otros transistores... RJK0381DPA, RJK0389DPA, RJK0390DPA, RJK0391DPA, RJK0392DPA, RJK0393DPA, RJK0394DPA, RJK0395DPA, AON7506, RJK0397DPA, RJK03A4DPA, RJK03B7DPA, RJK03B8DPA, RJK03B9DPA, RJK03C0DPA, RJK03C1DPB, RJK03C2DPB