RJK0396DPA
MOSFET. Datasheet pdf. Equivalent
Type Designator: RJK0396DPA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 28
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 4.4
nS
Cossⓘ -
Output Capacitance: 185
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009
Ohm
Package:
WPAK
RJK0396DPA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RJK0396DPA
Datasheet (PDF)
0.1. Size:92K renesas
rej03g1787 rjk0396dpads.pdf 
Preliminary Datasheet RJK0396DPA REJ03G1787-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-
8.1. Size:118K renesas
rej03g1823 rjk0390dpads.pdf
Preliminary Datasheet RJK0390DPA REJ03G1823-0130Silicon N Channel Power MOS FET Rev.1.30Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.7 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-
8.2. Size:92K renesas
rej03g1786 rjk0395dpads.pdf
Preliminary Datasheet RJK0395DPA REJ03G1786-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-
8.3. Size:95K renesas
rej03g1824 rjk0391dpads.pdf
Preliminary Datasheet RJK0391DPA REJ03G1824-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-
8.4. Size:92K renesas
rej03g1788 rjk0397dpads.pdf
Preliminary Datasheet RJK0397DPA REJ03G1788-0230Silicon N Channel Power MOS FET Rev.2.30Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-
8.5. Size:92K renesas
rej03g1785 rjk0394dpads.pdf
Preliminary Datasheet RJK0394DPA REJ03G1785-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.1 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-
8.6. Size:96K renesas
rej03g1825 rjk0392dpads.pdf
Preliminary Datasheet RJK0392DPA REJ03G1825-0230Silicon N Channel Power MOS FET Rev.2.30Power Switching Jun 17, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.7 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-
8.7. Size:93K renesas
rej03g1784 rjk0393dpads.pdf
Preliminary Datasheet RJK0393DPA REJ03G1784-0220Silicon N Channel Power MOS FET Rev.2.20Power Switching May 21, 2010Features High speed switching Capable of 4.5V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A
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