RJK03E2DNS Datasheet. Equivalente

 0.1. Size:139K  renesas
 rej03g1904 rjk03e2dnsds.pdf

Preliminary Datasheet RJK03E2DNS REJ03G1904-0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 06, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-A

 8.1. Size:106K  renesas
 rej03g1928 rjk03e4dpads.pdf

Preliminary Datasheet RJK03E4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1928-0210 Power Switching Rev.2.10 May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.8 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESA

 8.2. Size:108K  renesas
 rej03g1933 rjk03e9dpads.pdf

Preliminary Datasheet RJK03E9DPA REJ03G1933-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-A

 8.3. Size:118K  renesas
 rej03g1932 rjk03e8dpads.pdf

Preliminary Datasheet RJK03E8DPA REJ03G1932-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-A

 8.4. Size:138K  renesas
 rej03g1905 rjk03e3dnsds.pdf

Preliminary Datasheet RJK03E3DNS REJ03G1905-0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 06, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.0 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-A

 8.5. Size:138K  renesas
 rej03g1902 rjk03e0dnsds.pdf

Preliminary Datasheet RJK03E0DNS REJ03G1902-0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 06, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-A

 8.6. Size:117K  renesas
 rej03g1931 rjk03e7dpads.pdf

Preliminary Datasheet RJK03E7DPA REJ03G1931-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.3 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-A

 8.7. Size:140K  renesas
 rej03g1903 rjk03e1dnsds.pdf

Preliminary Datasheet RJK03E1DNS REJ03G1903-0200 Silicon N Channel Power MOS FET Rev.2.00 Power Switching Apr 06, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-A

 8.8. Size:105K  renesas
 rej03g1929 rjk03e5dpads.pdf

Preliminary Datasheet RJK03E5DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1929-0210 Power Switching Rev.2.10 May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.2 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESA

 8.9. Size:95K  renesas
 rej03g1930 rjk03e6dpads.pdf

Preliminary Datasheet RJK03E6DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1930-0210 Power Switching Rev.2.10 May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.8 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESA