Справочник MOSFET. RJK03E2DNS

 

RJK03E2DNS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: RJK03E2DNS

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 12.5 W

Предельно допустимое напряжение сток-исток |Uds|: 30 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Максимально допустимый постоянный ток стока |Id|: 16 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 3.9 ns

Выходная емкость (Cd): 157 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.009 Ohm

Тип корпуса: HWSON8

Аналог (замена) для RJK03E2DNS

 

 

RJK03E2DNS Datasheet (PDF)

0.1. rej03g1904 rjk03e2dnsds.pdf Size:139K _renesas

RJK03E2DNS RJK03E2DNS

Preliminary Datasheet RJK03E2DNS REJ03G1904-0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 06, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A

8.1. rej03g1902 rjk03e0dnsds.pdf Size:138K _renesas

RJK03E2DNS RJK03E2DNS

Preliminary Datasheet RJK03E0DNS REJ03G1902-0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 06, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A

8.2. rej03g1905 rjk03e3dnsds.pdf Size:138K _renesas

RJK03E2DNS RJK03E2DNS

Preliminary Datasheet RJK03E3DNS REJ03G1905-0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 06, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.0 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A

 8.3. rej03g1931 rjk03e7dpads.pdf Size:117K _renesas

RJK03E2DNS RJK03E2DNS

Preliminary Datasheet RJK03E7DPA REJ03G1931-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.3 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A

8.4. rej03g1928 rjk03e4dpads.pdf Size:106K _renesas

RJK03E2DNS RJK03E2DNS

Preliminary Datasheet RJK03E4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1928-0210Power Switching Rev.2.10May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.8 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESA

 8.5. rej03g1930 rjk03e6dpads.pdf Size:95K _renesas

RJK03E2DNS RJK03E2DNS

Preliminary Datasheet RJK03E6DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1930-0210Power Switching Rev.2.10May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.8 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESA

8.6. rej03g1932 rjk03e8dpads.pdf Size:118K _renesas

RJK03E2DNS RJK03E2DNS

Preliminary Datasheet RJK03E8DPA REJ03G1932-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A

8.7. rej03g1903 rjk03e1dnsds.pdf Size:140K _renesas

RJK03E2DNS RJK03E2DNS

Preliminary Datasheet RJK03E1DNS REJ03G1903-0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 06, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A

8.8. rej03g1929 rjk03e5dpads.pdf Size:105K _renesas

RJK03E2DNS RJK03E2DNS

Preliminary Datasheet RJK03E5DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1929-0210Power Switching Rev.2.10May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.2 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESA

8.9. rej03g1933 rjk03e9dpads.pdf Size:108K _renesas

RJK03E2DNS RJK03E2DNS

Preliminary Datasheet RJK03E9DPA REJ03G1933-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A

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