BUZ60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BUZ 60SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 60 400 V 5.5 A 1 TO-220 AB C67078-S1312-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 36 C 5.5Pulsed drain current IDpulsTC = 25 C 22Avalanche current,limited by Tjmax IAR 5.

isc N-Channel Mosfet Transistor BUZ60FEATURES5.5A, 400VSOA is Power Dissipation LimitedNanosecond Switching SpeedsLinear Transfer CharacteristicsHigh Input ImpedanceMajority Carrier DeviceMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters,

isc N-Channel Mosfet Transistor BUZ60BFEATURES4.5A, 400VSOA is Power Dissipation LimitedNanosecond Switching SpeedsLinear Transfer CharacteristicsHigh Input ImpedanceMajority Carrier DeviceMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters