RJK03E8DPA Todos los transistores

 

RJK03E8DPA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJK03E8DPA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.8 nS
   Cossⓘ - Capacitancia de salida: 430 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
   Paquete / Cubierta: WPAK
 

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RJK03E8DPA Datasheet (PDF)

 0.1. Size:118K  renesas
 rej03g1932 rjk03e8dpads.pdf pdf_icon

RJK03E8DPA

Preliminary Datasheet RJK03E8DPA REJ03G1932-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A

 8.1. Size:106K  renesas
 rej03g1928 rjk03e4dpads.pdf pdf_icon

RJK03E8DPA

Preliminary Datasheet RJK03E4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1928-0210Power Switching Rev.2.10May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.8 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESA

 8.2. Size:108K  renesas
 rej03g1933 rjk03e9dpads.pdf pdf_icon

RJK03E8DPA

Preliminary Datasheet RJK03E9DPA REJ03G1933-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A

 8.3. Size:138K  renesas
 rej03g1905 rjk03e3dnsds.pdf pdf_icon

RJK03E8DPA

Preliminary Datasheet RJK03E3DNS REJ03G1905-0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 06, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.0 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A

MOSTRAR MÁS

Otros transistores... RJK03E0DNS , RJK03E1DNS , RJK03E2DNS , RJK03E3DNS , RJK03E4DPA , RJK03E5DPA , RJK03E6DPA , RJK03E7DPA , IRFB31N20D , RJK03E9DPA , RJK03F0DPA , RJK03F6DNS , RJK03F7DNS , RJK03F8DNS , RJK03F9DNS , RJK03H1DPA , RJK0451DPB .

 

 
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