RJK03E8DPA MOSFET. Datasheet pdf. Equivalent
Type Designator: RJK03E8DPA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 6.8 nS
Cossⓘ - Output Capacitance: 430 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: WPAK
RJK03E8DPA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RJK03E8DPA Datasheet (PDF)
rej03g1932 rjk03e8dpads.pdf
Preliminary Datasheet RJK03E8DPA REJ03G1932-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A
rej03g1928 rjk03e4dpads.pdf
Preliminary Datasheet RJK03E4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1928-0210Power Switching Rev.2.10May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.8 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESA
rej03g1933 rjk03e9dpads.pdf
Preliminary Datasheet RJK03E9DPA REJ03G1933-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A
rej03g1905 rjk03e3dnsds.pdf
Preliminary Datasheet RJK03E3DNS REJ03G1905-0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 06, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.0 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A
rej03g1902 rjk03e0dnsds.pdf
Preliminary Datasheet RJK03E0DNS REJ03G1902-0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 06, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A
rej03g1904 rjk03e2dnsds.pdf
Preliminary Datasheet RJK03E2DNS REJ03G1904-0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 06, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A
rej03g1931 rjk03e7dpads.pdf
Preliminary Datasheet RJK03E7DPA REJ03G1931-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.3 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-A
rej03g1903 rjk03e1dnsds.pdf
Preliminary Datasheet RJK03E1DNS REJ03G1903-0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Apr 06, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A
rej03g1929 rjk03e5dpads.pdf
Preliminary Datasheet RJK03E5DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1929-0210Power Switching Rev.2.10May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.2 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESA
rej03g1930 rjk03e6dpads.pdf
Preliminary Datasheet RJK03E6DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1930-0210Power Switching Rev.2.10May 20, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.8 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESA
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 2N7219
History: 2N7219
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918