RJK03F0DPA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK03F0DPA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.8 nS

Cossⓘ - Capacitancia de salida: 240 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0064 Ohm

Encapsulados: WPAK

 Búsqueda de reemplazo de RJK03F0DPA MOSFET

- Selecciónⓘ de transistores por parámetros

 

RJK03F0DPA datasheet

 0.1. Size:108K  renesas
 rej03g1934 rjk03f0dpads.pdf pdf_icon

RJK03F0DPA

Preliminary Datasheet RJK03F0DPA REJ03G1934-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-A

 8.1. Size:91K  renesas
 rej03g1919 rjk03f9dnsds.pdf pdf_icon

RJK03F0DPA

Preliminary Datasheet RJK03F9DNS REJ03G1919-0100 Silicon N Channel Power MOS FET Rev.1.00 Power Switching Apr 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-A

 8.2. Size:91K  renesas
 rej03g1918 rjk03f8dnsds.pdf pdf_icon

RJK03F0DPA

Preliminary Datasheet RJK03F8DNS REJ03G1918-0100 Silicon N Channel Power MOS FET Rev.1.00 Power Switching Apr 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-A (P

 8.3. Size:92K  renesas
 rej03g1917 rjk03f7dnsds.pdf pdf_icon

RJK03F0DPA

Preliminary Datasheet RJK03F7DNS REJ03G1917-0100 Silicon N Channel Power MOS FET Rev.1.00 Power Switching Apr 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.2 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-A

MOSTRAR MÁS

Otros transistores... RJK03E2DNS, RJK03E3DNS, RJK03E4DPA, RJK03E5DPA, RJK03E6DPA, RJK03E7DPA, RJK03E8DPA, RJK03E9DPA, IRFZ24N, RJK03F6DNS, RJK03F7DNS, RJK03F8DNS, RJK03F9DNS, RJK03H1DPA, RJK0451DPB, RJK0452DPB, RJK0453DPB