RJK03F0DPA Datasheet. Specs and Replacement

Type Designator: RJK03F0DPA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.8 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm

Package: WPAK

RJK03F0DPA substitution

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RJK03F0DPA datasheet

 0.1. Size:108K  renesas
 rej03g1934 rjk03f0dpads.pdf pdf_icon

RJK03F0DPA

Preliminary Datasheet RJK03F0DPA REJ03G1934-0210 Silicon N Channel Power MOS FET Rev.2.10 Power Switching May 20, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-A ... See More ⇒

 8.1. Size:91K  renesas
 rej03g1919 rjk03f9dnsds.pdf pdf_icon

RJK03F0DPA

Preliminary Datasheet RJK03F9DNS REJ03G1919-0100 Silicon N Channel Power MOS FET Rev.1.00 Power Switching Apr 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-A ... See More ⇒

 8.2. Size:91K  renesas
 rej03g1918 rjk03f8dnsds.pdf pdf_icon

RJK03F0DPA

Preliminary Datasheet RJK03F8DNS REJ03G1918-0100 Silicon N Channel Power MOS FET Rev.1.00 Power Switching Apr 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-A (P... See More ⇒

 8.3. Size:92K  renesas
 rej03g1917 rjk03f7dnsds.pdf pdf_icon

RJK03F0DPA

Preliminary Datasheet RJK03F7DNS REJ03G1917-0100 Silicon N Channel Power MOS FET Rev.1.00 Power Switching Apr 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.2 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-A ... See More ⇒

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Detailed specifications: RJK03E2DNS, RJK03E3DNS, RJK03E4DPA, RJK03E5DPA, RJK03E6DPA, RJK03E7DPA, RJK03E8DPA, RJK03E9DPA, IRFZ24N, RJK03F6DNS, RJK03F7DNS, RJK03F8DNS, RJK03F9DNS, RJK03H1DPA, RJK0451DPB, RJK0452DPB, RJK0453DPB

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