RJK03F8DNS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RJK03F8DNS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 12.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 162 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0104 Ohm

Encapsulados: HWSON8

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RJK03F8DNS datasheet

 0.1. Size:91K  renesas
 rej03g1918 rjk03f8dnsds.pdf pdf_icon

RJK03F8DNS

Preliminary Datasheet RJK03F8DNS REJ03G1918-0100 Silicon N Channel Power MOS FET Rev.1.00 Power Switching Apr 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-A (P

 8.1. Size:91K  renesas
 rej03g1919 rjk03f9dnsds.pdf pdf_icon

RJK03F8DNS

Preliminary Datasheet RJK03F9DNS REJ03G1919-0100 Silicon N Channel Power MOS FET Rev.1.00 Power Switching Apr 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-A

 8.2. Size:92K  renesas
 rej03g1917 rjk03f7dnsds.pdf pdf_icon

RJK03F8DNS

Preliminary Datasheet RJK03F7DNS REJ03G1917-0100 Silicon N Channel Power MOS FET Rev.1.00 Power Switching Apr 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.2 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-A

 8.3. Size:91K  renesas
 rej03g1916 rjk03f6dnsds.pdf pdf_icon

RJK03F8DNS

Datasheet RJK03F6DNS REJ03G1916-0100 Silicon N Channel Power MOS FET Rev.1.00 Power Switching Apr 21, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008JB-A (Package name

MOSTRAR MÁS

Otros transistores... RJK03E5DPA, RJK03E6DPA, RJK03E7DPA, RJK03E8DPA, RJK03E9DPA, RJK03F0DPA, RJK03F6DNS, RJK03F7DNS, P60NF06, RJK03F9DNS, RJK03H1DPA, RJK0451DPB, RJK0452DPB, RJK0453DPB, RJK0454DPB, RJK0455DPB, RJK0456DPB