All MOSFET. RJK03F8DNS Datasheet

 

RJK03F8DNS Datasheet and Replacement


   Type Designator: RJK03F8DNS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 12.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 162 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0104 Ohm
   Package: HWSON8
 

 RJK03F8DNS substitution

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RJK03F8DNS Datasheet (PDF)

 0.1. Size:91K  renesas
 rej03g1918 rjk03f8dnsds.pdf pdf_icon

RJK03F8DNS

Preliminary Datasheet RJK03F8DNS REJ03G1918-0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Apr 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A(P

 8.1. Size:91K  renesas
 rej03g1919 rjk03f9dnsds.pdf pdf_icon

RJK03F8DNS

Preliminary Datasheet RJK03F9DNS REJ03G1919-0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Apr 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A

 8.2. Size:92K  renesas
 rej03g1917 rjk03f7dnsds.pdf pdf_icon

RJK03F8DNS

Preliminary Datasheet RJK03F7DNS REJ03G1917-0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Apr 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.2 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A

 8.3. Size:91K  renesas
 rej03g1916 rjk03f6dnsds.pdf pdf_icon

RJK03F8DNS

DatasheetRJK03F6DNS REJ03G1916-0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Apr 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A(Package name:

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Datasheet: RJK03E5DPA , RJK03E6DPA , RJK03E7DPA , RJK03E8DPA , RJK03E9DPA , RJK03F0DPA , RJK03F6DNS , RJK03F7DNS , P60NF06 , RJK03F9DNS , RJK03H1DPA , RJK0451DPB , RJK0452DPB , RJK0453DPB , RJK0454DPB , RJK0455DPB , RJK0456DPB .

History: SIA445EDJ

Keywords - RJK03F8DNS MOSFET datasheet

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