RJK03F9DNS Todos los transistores

 

RJK03F9DNS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RJK03F9DNS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 10 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.1 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0143 Ohm
   Paquete / Cubierta: HWSON8
 

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RJK03F9DNS Datasheet (PDF)

 0.1. Size:91K  renesas
 rej03g1919 rjk03f9dnsds.pdf pdf_icon

RJK03F9DNS

Preliminary Datasheet RJK03F9DNS REJ03G1919-0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Apr 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A

 8.1. Size:91K  renesas
 rej03g1918 rjk03f8dnsds.pdf pdf_icon

RJK03F9DNS

Preliminary Datasheet RJK03F8DNS REJ03G1918-0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Apr 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A(P

 8.2. Size:92K  renesas
 rej03g1917 rjk03f7dnsds.pdf pdf_icon

RJK03F9DNS

Preliminary Datasheet RJK03F7DNS REJ03G1917-0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Apr 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.2 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A

 8.3. Size:91K  renesas
 rej03g1916 rjk03f6dnsds.pdf pdf_icon

RJK03F9DNS

DatasheetRJK03F6DNS REJ03G1916-0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Apr 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A(Package name:

MOSTRAR MÁS

Otros transistores... RJK03E6DPA , RJK03E7DPA , RJK03E8DPA , RJK03E9DPA , RJK03F0DPA , RJK03F6DNS , RJK03F7DNS , RJK03F8DNS , IRF520 , RJK03H1DPA , RJK0451DPB , RJK0452DPB , RJK0453DPB , RJK0454DPB , RJK0455DPB , RJK0456DPB , RJK0629DPE .

History: RJK03E5DPA | STB20N65M5 | IRF9610PBF | STD3NK60ZT4 | 4N70L-TA3-T | RJK005N03 | VBZFB20N06

 

 
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