RJK03F9DNS - параметры транзистора MOSFET, его аналоги, datasheet

RJK03F9DNS Datasheet (PDF)

0.1. Size:91K renesas
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Preliminary Datasheet RJK03F9DNS REJ03G1919-0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Apr 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A

8.1. Size:91K renesas
rej03g1918 rjk03f8dnsds.pdf pdf_icon

Preliminary Datasheet RJK03F8DNS REJ03G1918-0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Apr 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A(P

8.2. Size:92K renesas
rej03g1917 rjk03f7dnsds.pdf pdf_icon

Preliminary Datasheet RJK03F7DNS REJ03G1917-0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Apr 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.2 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A

8.3. Size:91K renesas
rej03g1916 rjk03f6dnsds.pdf pdf_icon

DatasheetRJK03F6DNS REJ03G1916-0100Silicon N Channel Power MOS FET Rev.1.00Power Switching Apr 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JB-A(Package name: