RJK0451DPB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RJK0451DPB
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
Paquete / Cubierta: LFPAK
Búsqueda de reemplazo de RJK0451DPB MOSFET
RJK0451DPB Datasheet (PDF)
r07ds0073ej rjk0451dpb.pdf

Preliminary Datasheet RJK0451DPB R07DS0073EJ0102(Previous: REJ03G1763-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 5.5 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack
rej03g1877 rjk0454dpbds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1879 rjk0456dpbds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
r07ds0075ej rjk0453dpb.pdf

Preliminary Datasheet RJK0453DPB R07DS0075EJ0102(Previous: REJ03G1762-0101)Silicon N Channel Power MOS FET Rev.1.02Power Switching Jul 30, 2010Features High speed switching Low on-resistance Capable of 4.5 V gate drive RDS(on) = 1.9 m typ. (at VGS = 10 V) Low drive current Pb-free High density mounting Halogen-free Outline RENESAS Pack
Otros transistores... RJK03E8DPA , RJK03E9DPA , RJK03F0DPA , RJK03F6DNS , RJK03F7DNS , RJK03F8DNS , RJK03F9DNS , RJK03H1DPA , IRF730 , RJK0452DPB , RJK0453DPB , RJK0454DPB , RJK0455DPB , RJK0456DPB , RJK0629DPE , RJK0629DPK , RJK0629DPN .
History: HTS140P03 | 2SK2074 | APQ110SN5EA | 36N06 | BRCS250N10SDP | AUIRFR2307ZTR | P8010BD
History: HTS140P03 | 2SK2074 | APQ110SN5EA | 36N06 | BRCS250N10SDP | AUIRFR2307ZTR | P8010BD



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